Semiconductor device
A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.
1. A semiconductor device comprising:
a semiconductor layer in which a diode region and an IGBT region are formed, wherein,
the diode region includes a p-type anode region formed in a top surface portion of the semiconductor layer and an n-type cathode region formed in a bottom portion of the semiconductor layer,
the IGBT region includes a p-type body region formed in the top surface portion of the semiconductor layer and a p-type collector region formed in the bottom portion of the semiconductor layer,
a lifetime controlled region is formed in the semiconductor layer such that the lifetime controlled region continuously extends along a lateral direction of the semiconductor layer,
in a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region,
the second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region, wherein a tip of the second lifetime controlled region is located in an area that is equal to or more than 60 μm from the boundary along the lateral direction, and
in the plan view, the tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.
2. The semiconductor device according to claim 1 , wherein
the tip of the second lifetime controlled region is located in an area that is equal to or less than 500 μm from the boundary along the lateral direction.
3. A semiconductor device comprising:
a semiconductor layer in which a diode region and an IGBT region are formed, wherein,
the diode region includes a p-type anode region formed in a top surface portion of the semiconductor layer and an n-type cathode region formed in a bottom portion of the semiconductor layer,
the IGBT region includes a p-type body region formed in the top surface portion of the semiconductor layer and a p-type collector region formed in the bottom portion of the semiconductor layer,
a lifetime controlled region is formed in the semiconductor layer such that the lifetime controlled region continuously extends along a lateral direction of the semiconductor layer,
in a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region,
the second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region, and
in the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region;
wherein a plurality of trench gates is formed to penetrate the body region, and
in the plan view, the tip of the second lifetime controlled region is located in an area that is beyond the trench gate that is closest to the diode region.
4. The semiconductor device according to claim 3 , wherein
the tip of the second lifetime controlled region is located in an area that is equal to or less than 500 μm from the boundary along the lateral direction.