Recessed gate transistor with cylindrical fins
A recessed gate transistor with cylindrical fins is disclosed. The recessed gate transistor is disposed in an active region of a semiconductor substrate. Two isolation regions disposed in the semiconductor substrate to define an active region therebetween. The recessed gate transistor includes a gate structure, a source doping region and a drain doping region. The gate structure has at least three fins forms a concave and convex bottom of the gate structure. The front fin is disposed in one of the two isolation regions, the middle fin is disposed in the active region and a last fin disposed in the other one of the two isolation regions. The front fin and the last fin are both cylindrical. A lower part of the gate structure is M-shaped when view from the source doping region to the drain doping region direction.
1. A recessed gate transistor with cylindrical fins, comprising:
a semiconductor substrate;
two isolation regions disposed in the semiconductor substrate to define an active region therebetween;
a gate structure disposed in the semiconductor substrate, wherein the gate structure comprises a upper part and a lower part, the upper part is disposed in the active region, and the lower part has a front fin disposed in one of the two isolation regions, at least one middle fin disposed in the active region, and a last fin disposed in the other one of the two isolation regions, and the front fin and the last fin are both cylindrical, and wherein the upper part electrically connects to the middle fin;
a source doping region disposed in the active region at one side of the gate structure; and
a drain doping region disposed in the active region at the other side of the gate structure.
2. The recessed gate transistor with cylindrical fins of claim 1 , wherein the front fin is symmetric to the last fin.
3. The recessed gate transistor with cylindrical fins of claim 1 , wherein the lower part further comprises a joint element connects the front fin to the middle fin next to the front fin.
4. The recessed gate transistor with cylindrical fins of claim 1 , wherein the lower part further comprises a joint element connects the last fin to the middle fin next to the last fin.
5. The recessed gate transistor with cylindrical fins of claim 1 , the front fin and the middle fin next to the front fin define a first recessed region, and the last fin and the middle fin next to the last fin define a second recessed region.
6. The recessed gate transistor with cylindrical fins of claim 5 , wherein the semiconductor substrate in the active region has a first protrusion and a second protrusion.
7. The recessed gate transistor with cylindrical fins of claim 6 , wherein the first protrusion engages with the first recessed region, and the second protrusion engages with the second recessed region.
8. The recessed gate transistor with cylindrical fins of claim 6 , wherein the front fin and the middle fin next to the front fin sandwich the first protrusion.
9. The recessed gate transistor with cylindrical fins of claim 6 , wherein the last fin and the middle fin next to the last fin sandwich the second protrusion.
10. The recessed gate transistor with cylindrical fins of claim 1 , wherein the upper part of the gate structure comprises a vertical sidewall.
11. The recessed gate transistor with cylindrical fins of claim 1 , wherein the lower part of the gate structure has a concave and convex bottom.
12. The recessed gate transistor with cylindrical fins of claim 1 , wherein the lower part of the gate structure is M-shaped when view from the source doping region to the drain doping region direction.
13. The recessed gate transistor with cylindrical fins of claim 1 , wherein a first radius of the front fin is greater than a second radius of the middle fin.