Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
1. A focal plane array, comprising:
an integrated circuit including at least a first pixel electrode and a second pixel electrode;
an opticallv sensitive layer formed on the integated circuit, a first region of the optically sensitive layer substantially overlying the first pixel electrode and a second region of the optically sensitive layer substantially overlying the second pixel electrode;
wherein a first signal is configured to be relayed from the first pixel electrode to the integrated circuit, the first signal being indicative of light absorbed in the first region of the optically sensitive layer; and
wherein a second signal is configured to be relayed from the second pixel electrode to the integrated circuit, the second signal being indicative of light absorbed in the second region of the optically sensitive layer.
2. The focal plane array of claim 1 , wherein the optically sensitive layer is electronically biased.
3. The focal plane array of claim 1 , wherein the first signal and the second signal are electronic signals.
4. The focal plane array of claim 1 , wherein the first signal and the second signal are optical signals.
5. The focal plane array of claim 1 , wherein the integrated circuit includes silicon.
6. The focal plane array of claim 1 , wherein the optically sensitive layer is configured to sensitize the focal plane array into at least one of the ranges including the visible spectral range, the x-ray range, the ultraviolet range, the near infrared range, the short wavelength infrared range, and the long-wavelength infrared range of the electromagnetic spectrum.
7. The focal plane array of claim 1 , wherein the optically sensitive layer includes quantum dot nanocrystals.
8. The focal plane array of claim 1 , wherein the optically sensitive layer includes at least one semiconducting polymer.
9. The focal plane array of claim 1 , wherein the optically sensitive layer is spin-coated.
10. The focal plane array of claim 1 , wherein the optically sensitive layer is vapor-phase processed.
11. The focal plane array of claim 1 , wherein the first pixel electrode and the second pixel electrode each form substantially square electrode pads.
12. The focal plane array of claim 1 , wherein a sequence of signals from the integrated circuit corresponds to an image.
13. The focal plane array of claim 12 , wherein the sequence of signals from the integrated circuit corresponds to a map of the intensity of light on a respective one of the first pixel electrode and the second pixel electrode averaged across an exposure period.