Semiconductor device, manufacturing method of semiconductor device, and power source device
A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
1. A manufacturing method of a semiconductor device comprising:
forming one of a layer with a first metal and a layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip;
forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and
forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area,
wherein one of the layer with the first metal and the layer with the second metal is formed on the whole surface of one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and wherein the other one of the layer with the first metal and the layer with the second metal is formed on the part of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip.
2. The manufacturing method of the semiconductor device according to claim 1 , the other one of the layer with the first metal and the layer with the second metal is formed in a central part of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip.
3. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the other one of the layer with the first metal and the layer with the second metal is formed in a plurality of parts of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip.
4. A manufacturing method of a semiconductor device comprising
forming one of a layer with a first metal and a layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip;
forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and
forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area, wherein the other one of the layer with the first metal and the layer with the second metal is formed on a circumference of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip.
5. The manufacturing of the semiconductor device according to claim 4 , further comprising:
forming a layer with a third metal, which is non-reactive with at least one of the first metal and the second metal, in an area around the semiconductor chip mounting area on the support plate.
6. The manufacturing method of the semiconductor device according to claim 5 ,
wherein the first metal is one of Ag, Cu, Au, Bi, In, Ni, Pb, and Sb,
wherein the second metal, which forms an alloy by reacting with the first metal, is one of Sn, Bi, In, Zn, Ag, Sb, Cu, Ni, and Pb, and
wherein the third metal, which is non-reactive with the second metal, is one of Cr, Fe, Ti, and Zr.
7. The manufacturing method of the semiconductor device according to claim 4 ,
wherein the first metal is one of Ag, Cu, Au, Bi, In, Ni, Pb, and Sb, and wherein the second metal forms an alloy by reacting with the first metal.
8. The manufacturing method of the semiconductor device according to claim 7 ,
wherein the first metal is one of Sn, Bi, In, Zn, Ag, Sb, Cu, Ni, and Pb.
9. A manufacturing method of a semiconductor device comprising:
forming one of a layer with a first metal and a layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip;
forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and
forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area, further comprising:
forming a projection part on the surface of one of the layer with the first metal and the layer with the second metal.
10. The manufacturing method of the semiconductor device according to claim 9 , further comprising:
forming an adhesion layer on the back surface of the semiconductor chip before forming the layer with the first metal or the layer with the second metal on the back surface of the semiconductor chip.