Xanthene based semiconductor compositions
A small molecule semiconductor of Formula (I): wherein R 1 , R 2 , R 3 and R 4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom, wherein n is 1 or 2, and wherein X is independently S or
1. A small molecule semiconductor of Formula (I-c) or (I-d):
wherein R 1 , R 2 , R 3 and R 4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom.
2. The small molecule semiconductor of claim 1 , wherein R 1 and R 2 are hydrogen atoms.
3. The small molecule semiconductor of claim 1 , wherein R 1 and R 2 in Formulas (I-c) and (I-d) are independently selected from the group consisting of a hydrogen atom, an alkyl group, a cyano group and a halogen atom.
4. The small molecule semiconductor of claim 3 , wherein the small molecule semiconductor has the structure of Formula (II)
wherein R 1 and R 2 in Formula (II) are hydrogen atoms, wherein R is independently selected from a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and a halogen atom, and
wherein m is from 1 to 5.
5. A semiconductor composition comprising:
a polymer binder; and
a small molecule semiconductor of Formula (I-c) or (I-d):
wherein R 1 , R 2 , R 3 and R 4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom.
6. The semiconductor composition of claim 5 , wherein R 1 and R 2 are hydrogen atoms.
7. The semiconductor composition of claim 5 , wherein R 1 and R 2 in Formulas (I-c) and (I-d) are independently selected from the group consisting of a hydrogen atom, an alkyl group, a cyano group and a halogen atom.
8. The semiconductor composition of claim 5 , wherein the polymer binder is polystyrene, poly(a-methyl styrene), poly(4-methyl styrene), poly(alpha-methyl styrene-co-vinyl toluene), poly(styrene-block-butadiene-block-styrene), poly(styrene-block-isopene-block-styrene), poly(vinyl toluene), a terpene resin, poly(styrene-co-2,4-dimethylstyrene), poly(chlorostyrene), poly(styrene-co-a-methyl styrene), poly(styrene-co-butadiene), a polycarbazole, a polytriarylamine, poly(N-vinylcarbazole), or mixtures thereof.
9. The semiconductor composition of claim 5 , wherein the polymer binder is a styrene-based polymer.
10. An electronic device comprising a semiconducting layer, the semiconducting layer comprising:
a small molecule semiconductor of Formula (I-c) or (I-d):
wherein R 1 , R 2 , R 3 and R 4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom.
11. The electronic device of claim 10 , wherein R 1 and R 2 are hydrogen atoms.
12. The electronic device of claim 10 , wherein R 1 and R 2 in Formulas (I-c) and (I-d) are independently selected from the group consisting of a hydrogen atom, an alkyl group, a cyano group and a halogen atom.
13. The electronic device of claim 10 , wherein the semiconducting layer further comprises a polymer binder.
14. The electronic device of claim 10 , wherein the polymer binder is polystyrene, poly(a-methyl styrene), poly(4-methyl styrene), poly(alpha-methyl styrene-co-vinyl toluene), poly(styrene-block-butadiene-block-styrene), poly(styrene-block-isopene-block-styrene), poly(vinyl toluene), a terpene resin, poly(styrene-co-2,4-dimethylstyrene), poly(chlorostyrene), poly(styrene-co-a-methyl styrene), poly(styrene-co-butadiene), a polycarbazole, a polytriarylamine, poly(N-vinylcarbazole), or mixtures thereof.
15. The electronic device of claim 10 , wherein the polymer binder is a styrene-based polymer.
16. The electronic device of claim 10 , the electronic device further comprising a dielectric layer;
wherein the dielectric layer comprises a modified surface; and
wherein the semiconducting layer is in direct contact with the modified surface.
17. The electronic device of claim 16 , wherein the modified surface has been modified with an organosilane.