Semiconductor device and method for manufacturing semiconductor device
A p anode layer ( 2 ) is formed on one main surface of an n − drift layer ( 1 ). An n + cathode layer ( 3 ) having an impurity concentration more than that of the n − drift layer ( 1 ) is formed on the other main surface of the n − drift layer ( 1 ). An anode electrode ( 4 ) is formed on the surface of the p anode layer ( 2 ). A cathode electrode ( 5 ) is formed on the surface of the n + cathode layer ( 3 ). An n-type broad buffer region ( 6 ) that has a net doping concentration more than the bulk impurity concentration of a wafer and less than that of the n + cathode layer ( 3 ) and the p anode layer ( 2 ) is formed in the n − drift layer ( 1 ). The resistivity ρ 0 of the n − drift layer ( 1 ) satisfies 0.12V 0 ≦ρ 0 ≦0.25V 0 with respect to a rated voltage V 0 . The total amount of the net doping concentration of the broad buffer region ( 6 ) is equal to or more than 4.8×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 .
1. A semiconductor device comprising:
a first first-conductivity-type semiconductor layer;
a second second-conductivity-type semiconductor layer that is provided on one main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer;
a third first-conductivity-type semiconductor layer that is provided on the other main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer; and
a first-conductivity-type broad buffer region that is provided in the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer and in which a local maximum value of an impurity concentration distribution is less than the impurity concentration of the second semiconductor layer and the third semiconductor layer,
wherein the total amount of the net doping concentration of the broad buffer region is equal to or more than 4.8×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 , and
wherein the resistivity ρ 0 (Ωcm) of the first semiconductor layer satisfies 0.12V 0 ≦ρ 0 ≦0.25V 0 with respect to a rated voltage V 0 (V).
2. The semiconductor device according to claim 1 ,
wherein the total amount of the net doping concentration of the broad buffer region is equal to or more than 5.2×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 , and
wherein the resistivity ρ 0 of the first semiconductor layer satisfies 0.133V 0 ≦ρ 0 ≦0.25V 0 with respect to the rated voltage V 0 (V).
3. The semiconductor device according to claim 1 ,
wherein a plurality of broad buffer regions are provided in the first semiconductor layer.
4. The semiconductor device according to claim 3 ,
wherein a ratio γ of the sum of the widths of the plurality of broad buffer regions to the width of the first semiconductor layer, a ratio η of the sum of reductions in the electric field intensities of the plurality of broad buffer regions to a critical electric field intensity when an reverse-bias voltage with the same level as a breakdown voltage is applied, and a deviation ratio a of a measured value to a standard value of the donor concentration of a substrate that is to form the first semiconductor layer satisfies 4α(γ/η)/[(2−α)(2+α)]<α.
5. The semiconductor device according to any one of claims 1 to 4 ,
wherein the first semiconductor layer is an FZ silicon substrate.
6. A semiconductor device comprising:
a first-conductivity-type drift layer;
a second-conductivity-type base layer that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer;
a first-conductivity-type emitter layer that is provided on the first main surface of the drift layer so as to come into contact with the base layer and has an impurity concentration more than that of the base layer;
an insulating film that comes into contact with the drift layer, the base layer, and the emitter layer;
a gate electrode that is adjacent to the drift layer, the base layer, and the emitter layer through the insulating film;
a second-conductivity-type collector layer that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and
a first-conductivity-type broad buffer region that is provided in the drift layer and has an impurity concentration more than that of the drift layer and in which a local maximum value of an impurity concentration distribution is less than the base layer and the collector layer,
wherein the total amount of the net doping concentration of the broad buffer region is equal to or more than 4.8×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 , and
wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.12V 0 ≦ρ 0 0.25V 0 with respect to a rated voltage V 0 (V).
7. The semiconductor device according to claim 6 ,
wherein the total amount of the net doping concentration of the broad buffer region is equal to or more than 5.2×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 , and
wherein the resistivity ρ 0 of the drift layer satisfies 0.133V 0 ≦ρ 0 ≦0.25V 0 with respect to the rated voltage V 0 (V).
8. The semiconductor device according to claim 6 ,
wherein a plurality of broad buffer regions are provided in the drift layer.
9. The semiconductor device according to claim 8 ,
wherein a ratio γ of the sum of the widths of the plurality of broad buffer regions to the width of the drift layer, a ratio η of the sum of reductions in the electric field intensities of the plurality of broad buffer regions to a critical electric field intensity when a voltage with the same level as a breakdown voltage is applied, and a deviation ratio a of a measured value to a standard value of the donor concentration of a substrate that is to form the drift layer satisfies 4α(γ/η)/[(2−α)(2+α)]<α.
10. The semiconductor device according to any one of claims 6 to 9 , further comprising:
a first-conductivity-type field stop layer that comes into contact with the drift layer or the broad buffer region on the first main surface of the substrate and comes into contact with the collector layer on the second main surface.
11. The semiconductor device according to any one of claims 6 to 9 , further comprising:
a first-conductivity-type field stop layer that comes into contact with the drift layer or the broad buffer region on the first main surface of the substrate and comes into contact with the collector layer on the second main surface,
wherein the total amount of the net doping concentration of the drift layer, the broad buffer region, and the field stop layer is equal to or more than 1.2×10 12 atoms/cm 2 and equal to or less than 2.0×10 12 atoms/cm 2 .
12. The semiconductor device according to any one of claims 6 to 9 ,
wherein the drift layer is an FZ silicon substrate.
13. A method of manufacturing a semiconductor device including a first first-conductivity-type semiconductor layer, a second second-conductivity-type semiconductor layer that is provided on one main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer, a third first-conductivity-type semiconductor layer that is provided on the other main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer, and a first-conductivity-type broad buffer region that is provided in the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer and in which a local maximum value of an impurity concentration distribution is less than the impurity concentration of the second semiconductor layer and the third semiconductor layer, comprising:
a first forming step of forming the second semiconductor layer on the one main surface of the first semiconductor layer; and
a second forming step of irradiating the second semiconductor layer on the first semiconductor layer with a hydrogen ion at a projected range to the first semiconductor layer and performing a heat treatment at a temperature of 300° C. or more to 550° C. or less, thereby forming the broad buffer region in the first semiconductor layer,
wherein, in the second forming step, the broad buffer region having a total net doping concentration of 4.8×10 11 atoms/cm 2 or more to 1.0×10 12 atoms/cm 2 or less is formed in the first semiconductor layer, and
wherein the resistivity ρ 0 of the first semiconductor layer satisfies 0.12V 0 ≦ρ 0 ≦0.25V 0 with respect to a rated voltage V 0 (V).
14. The method of manufacturing a semiconductor device according to claim 13 , further comprising:
an introducing step of performing a heat treatment at a temperature of 1000° C. or more in an oxidizing atmosphere to introduce oxygen into the first semiconductor layer before the first forming step.
15. The method of manufacturing a semiconductor device according to claim 14 ,
wherein, in the introducing step, the oxygen is introduced at a concentration of 1×10 16 atoms/cm 3 or more into the first semiconductor layer.
16. A method of manufacturing a semiconductor device including a first first-conductivity-type semiconductor layer, a second second-conductivity-type semiconductor layer that is provided on one main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer, a third first-conductivity-type semiconductor layer that is provided on the other main surface of the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer, and a first-conductivity-type broad buffer region that is provided in the first semiconductor layer and has an impurity concentration more than that of the first semiconductor layer and in which a local maximum value of an impurity concentration distribution is less than the impurity concentration of the second semiconductor layer and the third semiconductor layer, comprising:
a second forming step of irradiating the other main surface of the first semiconductor layer with a hydrogen ion at a projected range to a portion of the first semiconductor layer deeper than a position where the third semiconductor layer is to be formed by a subsequent step and performing a heat treatment at a temperature of 300° C. or more to 550° C. or less, thereby forming the broad buffer region in the first semiconductor layer,
wherein, in the second forming step, the broad buffer region having a total net doping concentration of 4.8×10 11 atoms/cm 2 or more to 1.0×10 12 atoms/cm 2 or less is formed in the first semiconductor layer, and
the resistivity ρ 0 of the first semiconductor layer satisfies 0.12V 0 ≦ρ 0 ≦0.25V 0 with respect to a rated voltage V 0 (V).
17. The method of manufacturing a semiconductor device according to claim 16 , further comprising:
an introducing step of performing a heat treatment at a temperature of 1000° C. or more in an oxidizing atmosphere to introduce oxygen into the first semiconductor layer before the second forming step.
18. The method of manufacturing a semiconductor device according to claim 17 ,
wherein, in the introducing step, the oxygen is introduced at a concentration of 1×10 16 atoms/cm 3 or more into the first semiconductor layer.
19. The method of manufacturing a semiconductor device according to any one of claims 13 to 18 ,
wherein, in the second forming step, a hydrogen-induced donor is formed by the irradiation with the hydrogen ion, thereby forming the broad buffer region.
20. The method of manufacturing a semiconductor device according to any one of claims 13 to 18 ,
wherein the first semiconductor layer is an FZ silicon substrate.