Negative electrode contacting silicon oxide active material layers for lithium secondary battery and method for producing the same

1. A negative electrode for a lithium secondary battery, comprising:

a current collector having a plurality of bumps on a surface thereof;

a first active material layer formed on the current collector; and

a second active material layer being formed on the first active material layer and including a plurality of active material particles, wherein:

each of the plurality of active material particles is located on a corresponding bump of the current collector,

the first active material layer has a chemical composition represented as SiO x , where 0.1≦x<1, and the plurality of active material particles have a chemical composition represented as SiO y , where 0<y<1,

an area of contact between the current collector and the first active material layer is larger than an area of contact between the plurality of active material particles and the first active material layer, and

the plurality of active material particles are arranged with spaces therebetween and do not contact with each other.

2. The negative electrode for a lithium secondary battery of claim 1 , wherein the x in the chemical composition of the first active material layer is different from the y in the chemical composition of the plurality of active material particles.

3. The negative electrode for a lithium secondary battery of claim 1 , wherein the plurality of bumps are placed in a regular arrangement on the surface of the current collector.

4. The negative electrode for a lithium secondary battery of claim 1 , wherein the first active material layer has a thickness of no less than 0.01 μm and no more than 3 μm.

5. The negative electrode for a lithium secondary battery of claim 1 , wherein a growth direction of the plurality of active material particles is tilted with respect to a direction perpendicular to a plane which can be obtained by averaging out a ruggedness on the surface of the current collector.

6. The negative electrode for a lithium secondary battery of claim 5 , wherein an angle of the growth direction of the plurality of active material particles with respect to a normal direction of the surface of the current collector is different from an angle of a growth direction of the first active material layer with respect to the normal direction of the surface of the current collector.

7. The negative electrode for a lithium secondary battery of claim 6 , wherein the angle of the growth direction of the plurality of active material particles is greater than the angle of the growth direction of the first active material layer.

8. A lithium secondary battery comprising:

a positive electrode capable of occluding and releasing lithium ions;

the negative electrode for a lithium secondary battery of claim 1 ;

a separator disposed between the positive electrode and the negative electrode for a lithium secondary battery; and

an electrolyte having lithium-ion conductivity.

9. A method of producing the negative electrode for a lithium secondary battery according to claim 1 , comprising:

(A) a step of providing the current collector having the plurality of bumps on the surface thereof;

(B) a step of forming, on the surface of the current collector, the first active material layer having the chemical composition represented as SiO x , where 0.1≦x<1; and

(C) a step of forming, on each bump of the current collector via the first active material layer, the active material particle having the chemical composition represented as SiO y , where 0<y<1, thereby forming the second active material layer including the plurality of active material particles,

wherein the plurality of active material particles are arranged with spaces therebetween and do not contact with each other.

10. The method of claim 9 , wherein:

step (B) includes a step of supplying silicon for the current collector from a direction constituting an angle within ±20° with respect to a normal direction of the surface of the current collector, and

step (C) includes a step of supplying silicon for the current collector from a direction constituting an angle of no less than 20° and no more than 90° with respect to the normal direction of the surface of the current collector.

11. The method of claim 9 , wherein step (B) is performed by a sputtering technique.

12. The method of claim 9 , wherein step (B) is performed by a vapor deposition technique.