Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode

1. A photo diode, comprising:

a P-I-N structure that includes:

an intrinsic region on a substrate, wherein the intrinsic region includes amorphous silicon and/or polycrystalline silicon;

a P+ doping region in a first portion of the intrinsic region, the P+ doping region being a P-type semiconductor of the P-I-N structure; and

an oxide semiconductor region that is an N-type semiconductor of the P-I-N structure, the oxide semiconductor region being spaced apart from the P+ doping region and being separate from and on a second portion of the intrinsic region, the second portion of the intrinsic region being different from the first portion of the intrinsic region.

2. The photo diode as claimed in claim 1 , wherein the intrinsic region and the P+ doping region lie within a first plane that overlaps an entirety of the substrate and the oxide semiconductor region is excluded from the first plane.

3. The photo diode as claimed in claim 1 , wherein:

the oxide semiconductor region includes at least one of a Hf oxide, a Zn oxide, an In oxide, a Ga oxide, a Sn oxide, a Ti oxide, an InZn oxide, an InSn oxide, a HflnZn oxide, and a GaInZn oxide such that the oxide semiconductor region is the N-type semiconductor of the P-I-N structure,

the intrinsic region and the P+ doping region include silicon, and

the intrinsic region is electrically connected to the oxide semiconductor region and the P+ doping region.

4. The photo diode as claimed in claim 1 , wherein the oxide semiconductor region includes one of an HflnZn oxide and a GaInZn oxide.

5. The photo diode as claimed in claim 1 , wherein a thickness of the oxide semiconductor region is in a range of about 0.03 μm to about 1 μm.

6. The photo diode as claimed in claim 1 , wherein the P+ doping region includes a Group III impurity ion.

7. The photo diode as claimed in claim 1 , wherein the P+ doping region includes one of a boron (B) ion, a BF 2 ion, and a B 2 H 5 ion.

8. The photo diode as claimed in claim 1 , wherein an ion concentration of the P+ doping region is in a range of about 1.0 10 atom/ cm 2 to about 1.0 16 atom/ cm 2 .

9. The photo diode as claimed in claim 1 , wherein a thickness of the P+ doping region is in a range of about 0.03 μm to about 1 μm.

10. The photo diode as claimed in claim 1 , wherein a thickness of the intrinsic region is in a range of about 0.03 μm to about 1 μm.

11. A photo diode, comprising:

a P-I-N structure that includes:

an intrinsic region on a substrate, the intrinsic region including amorphous silicon;

a P+ doping region in a first portion of the intrinsic region, the P+ doping region being a P-type semiconductor of the P-I-N structure that includes a B ion; and

an oxide semiconductor region that is an N-type semiconductor of the P-I-N structure and that includes HflnZn oxide, the oxide semiconductor region being spaced apart from the P+ doping region and being separate from and on a second portion of the intrinsic region, the second portion of the intrinsic region being different from the first portion of the intrinsic region.

12. A photo diode, comprising:

a P-I-N structure that includes:

an intrinsic region on a substrate, the intrinsic region including polycrystalline silicon;

a P+ doping region in a first portion of the intrinsic region, the P+ doping region being a P-type semiconductor of the P-I-N structure that includes a B ion; and

an oxide semiconductor region that is an N-type semiconductor of the P-I-N structure and that includes HfInZn oxide, the oxide semiconductor region being spaced apart from the P+ doping region and being separate from and on a second portion of the intrinsic region, the second portion of the intrinsic region being different from the first portion of the intrinsic region.

13. A method of manufacturing a photo diode that has a P-I-N structure, the method comprising:

providing a substrate;

forming an intrinsic region by depositing an amorphous silicon layer on the substrate;

forming a P-type semiconductor of the P-I-N structure includes forming a P+ doping region by doping an impurity ion on a first portion of the intrinsic region; and

forming an N-type semiconductor of the P-I-N structure includes forming an oxide semiconductor region to be spaced apart from the P+ doping region and to be separate from and on a second portion of the intrinsic region, the second portion of the intrinsic region being different from the first portion of the intrinsic region.

14. The method as claimed in claim 13 , wherein the forming of the P+ doping region includes:

forming a mask covering an area of the intrinsic region other than the first portion of the intrinsic region on which the impurity ion is to be doped,

implanting a Group III impurity ion into the first portion of the intrinsic region; and removing the mask.

15. The method as claimed in claim 14 , wherein, in the implanting of the Group III impurity ion, a boron (B) ion, a BF 2 ion, or a B 2 H 5 ion is implanted with an energy intensity of about 1 to about 50 KeV such that an implanted ion concentration in the P+ doping region is in a range of about 1.0 10 atom/cm 2 to about 1.0 16 atom/cm 2 .

16. The method as claimed in claim 13 , wherein the forming of the oxide semiconductor region includes depositing at least one of a Hf oxide, a Zn oxide, an In oxide, a Ga oxide, a Sn oxide, a Ti oxide, an InZn oxide, an InSn oxide, a HflnZn oxide, and a GaInZn oxide on the intrinsic region such that the oxide semiconductor region has a thickness of about 0.03 μm to about 1 μm.

17. The method as claimed in claim 13 , wherein the forming of the intrinsic region further includes forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer.

18. A photo sensor comprising:

the photo diode as claimed in claim 1 ,

a buffer layer under the photo diode, and

an electrode on the photo diode.