IP Library Granted Patent US 8,853,521
Granted Patent B2
US 8,853,521 · App. 13/193,302 · Granted Oct 7, 2014

Truncated pyramid structures for see-through solar cells

Inventors: Mehrdad Moslehi (Los Altos, CA); David Xuan-Qi Wang (Fremont, CA)
Assignee: Solexel, Inc.
H01L31/0352H01L31/1892H01L31/035281Y02E10/547H01L31/1804H01L31/04
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Quick Facts
Patent No.
US 8,853,521
App. No.
13/193,302
Granted
Oct 7, 2014
Kind
B2
Abstract

The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

Claims (23)

1. A method for making a see-through three-dimensional monocrystalline silicon thin film solar cell substrate, comprising the steps of:

patterning a reusable monocrystalline silicon template;

forming a sacrificial porous silicon release layer on a surface of said reusable monocrystalline silicon template;

depositing a doped monocrystalline silicon film onto said sacrificial porous silicon release layer, said doped monocrystalline silicon film being substantially conformal to said sacrificial porous silicon release layer and having a thickness in the range of 2 to 50 microns for forming a three-dimensional monocrystalline silicon thin film solar cell substrate and having a three-dimensional topography corresponding to said patterned reusable monocrystalline silicon template and comprising:

a plurality of discrete and isolated inverted pyramidal cavities at predetermined locations on said three-dimensional monocrystalline silicon thin-film solar cell substrate each comprising a pyramidal tip and tapered sidewalls, said plurality of discrete and isolated inverted pyramidal cavities having a pyramidal cavity height in the range of approximately 100 to 400 microns on a front surface of said three-dimensional monocrystalline silicon thin-film solar cell substrate, said plurality of discrete and isolated inverted pyramidal cavities having central axes substantially perpendicular to said front surface of said three-dimensional monocrystalline silicon thin-film solar cell substrate and having a ratio between height and side dimensions ranging from approximately 1.5 to 3; and

a plurality of interconnected continuous ridges interspersed among and bordering said plurality of discrete and isolated inverted pyramidal cavities and associated to construct said monocrystalline silicon thin-film solar cell substrate as a free-standing, self-supporting substrate, and further having a ridge width ranging from approximately 0.5 to 5 microns on said front surface of said three-dimensional monocrystalline silicon thin-film solar cell substrate, wherein

said three-dimensional monocrystalline silicon thin-film solar cell substrate, said plurality of discrete and isolated inverted pyramidal cavities, and said plurality of interconnected continuous ridges cooperate to enable a free-standing, self-supporting three-dimensional monocrystalline silicon thin-film solar cell with sufficient mechanical rigidity and resilience for reduced cell breakage rate in a solar cell production factory;

detaching said three-dimensional monocrystalline silicon thin-film solar cell substrate from said reusable monocrystalline silicon template through separation at said sacrificial porous silicon release layer; and

selectively removing a predetermined portion of a plurality of said pyramidal tips from said plurality of discrete and isolated inverted pyramidal cavities to create a plurality of see-through holes of specified opening area.

2. The method of claim 1 , wherein:

said plurality of discrete and isolated inverted pyramidal cavities comprise hexagonal pyramidal cavities.

3. The method of claim 1 , wherein:

said pyramidal cavities comprise quadrilateral plurality of discrete and isolated inverted pyramidal cavities.

4. The method of claim 1 , wherein:

said pyramidal cavities comprise triangular plurality of discrete and isolated inverted pyramidal cavities.

5. The method of claim 1 , wherein said patterning step comprises laser micromachining.

6. The method of claim 1 , wherein said patterning step comprises photolithography and reactive ion etching.

7. The method of claim 1 , wherein said sacrificial porous silicon release layer comprises a first layer having a first porosity and a second layer having a second porosity.

8. The method of claim 1 , wherein said step of detaching said three-dimensional monocrystalline silicon thin-film solar cell substrate from said reusable monocrystalline silicon template comprises:

mechanically separating said three-dimensional monocrystalline silicon thin film from said sacrificial layer.

9. The method of claim 1 , wherein said step of detaching said three-dimensional monocrystalline silicon thin-film solar cell substrate from said reusable monocrystalline silicon template comprises:

chemically etching said sacrificial porous silicon release layer.

10. The method of claim 1 , further comprising a step of forming base and emitter metallization by fire-through metallization.

Assignments (6)
ASSIGNMENT OF LOAN DOCUMENTS Recorded Sep 29, 2017
From: OPUS BANK
To: OB REALTY, LLC
Reel/Frame 044062/0383 →
CHANGE OF NAME Recorded Jul 28, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043367/0649 →
RECORDATION OF FORECLOSURE OF PATENT PROPERTIES Recorded Jul 27, 2017
From: OB REALTY, LLC
To: OB REALTY, LLC
Reel/Frame 043350/0822 →
CHANGE OF NAME Recorded Jul 26, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043342/0439 →
SECURITY INTEREST Recorded Jan 7, 2015
From: SOLEXEL, INC.
To: OPUS BANK
Reel/Frame 034731/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2012
From: MOSLEHI, MEHRDAD; WANG, DAVID XUAN-QI
To: SOLEXEL, INC.
Reel/Frame 028184/0212 →
Continuity (4)
Continuation In Part 12626778 · Nov 27, 2009
Continuation In Part 11868493 · Oct 6, 2007
Provisional Application 61118243 · Nov 26, 2008
Related Publication 20120021560A1 · Jan 26, 2012