Semiconductor ferroelectric device, manufacturing method for the same, and electronic device

1. A manufacturing method for a semiconductor device, said method comprising:

forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask;

forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and

forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer;

forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film;

forming a ferroelectric layer on the lower electrode; and

forming an upper electrode on the ferroelectric layer, wherein a hydrogen concentration of the thin film transistor is higher than a hydrogen concentration off the ferroelectric layer, and

wherein the semiconductor device further comprises a protective oxide film between at least one of the source region, the drain region, the interlayer dielectric film, and the channel region, and the insulating substrate, wherein the channel region comprises a plurality of Si—H bonds.

2. A manufacturing method for a semiconductor device, comprising:

forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film and forming source/drain regions and a channel region by implanting ions into the polysilicon thin film by using the gate electrode as a mask;

forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film;

forming a silicon hydronitride film so as to cover the interconnection layer;

forming a lower electrode on this silicon hydronitride film;

forming a ferroelectric layer on the lower electrode; and

forming an upper electrode on the ferroelectric layer and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film,

wherein a hydrogen concentration of the polysilicon thin film, the gate electrode, the source/drain regions, and the channel region are higher than a hydrogen concentration of the ferroelectric layer, and

wherein the semiconductor device further comprises a protective oxide film between at least one of the source region, the drain region, the interlayer dielectric film, and the channel region, and the insulating substrate, wherein the channel region comprises a plurality of Si—H bonds.

3. The manufacturing method for a semiconductor device according to claim 1 , wherein the silicon hydronitride film is formed by a plasma CVD (Chemical Vapor Deposition) (vapor growth) method.

4. The manufacturing method for a semiconductor device according to claim 2 , wherein the silicon hydronitride film is formed by plasma CVD (Chemical Vapor Deposition) (vapor growth) method.

5. The manufacturing method for a semiconductor device according to claim 1 , wherein a temperature of the polysilicon thin film does not become higher than 350° C. in the steps after the forming the silicon hydronitride layer.

6. The manufacturing method for a semiconductor device according to claim 2 , wherein the temperature of the polysilicon thin film does not become higher than 350° C. in the steps after the forming the silicon hydronitride layer.