Semiconductor device
An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103 , and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107 , wherein the intermediate layer 106 includes a first region 106 a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106 b whose indium atomic concentration is less than that of the first region.
1. A semiconductor device comprising:
a semiconductor layer composed of an oxide semiconductor material containing indium;
an ohmic electrode provided on the semiconductor layer and having an ohmic contact with the semiconductor layer; and
an intermediate layer provided between the semiconductor layer and the ohmic electrode,
wherein the intermediate layer includes a first region whose indium atomic concentration is greater than that of an interior of the semiconductor layer and a second region whose indium atomic concentration is less than that of the first region,
the first and second regions are constituted to contain an oxide of a metal forming the ohmic electrode,
the metal forming the ohmic electrode contains manganese (Mn), and
an atomic concentration of the manganese is lower in the first region than in the second region.
2. The semiconductor device as recited in claim 1 , wherein the first region is located in contact with the semiconductor layer and the second region is located in contact with the ohmic electrode.
3. The semiconductor device as recited in claim 1 , wherein the first region is composed of crystal grains containing indium (In).
4. The semiconductor device as recited in claim 1 , wherein the second region is composed of amorphous material.
5. The semiconductor device as recited in claim 1 , wherein the thickness of the intermediate layer where the first region and the second region meet is 3 nm or more and 30 nm or less.
6. The semiconductor device as recited in claim 1 , wherein an electrovalence of the manganese increases from the second region toward the first region.
7. The semiconductor device as recited in any claim 1 , wherein oxygen concentrations of the first and second regions are lower than an oxygen concentration of the semiconductor layer.
8. The semiconductor device recited in claim 1 , wherein the ohmic electrode is formed of a copper alloy whose main constituent element is copper.
9. The semiconductor device as recited in claim 8 , wherein the second region contains more copper than the first region.
10. The semiconductor device as recited in claim 2 , wherein the first region is composed of crystal grains containing indium (In).
11. A semiconductor device comprising:
a semiconductor layer composed of an oxide semiconductor material containing indium;
an ohmic electrode provided on the semiconductor layer and having an ohmic contact with the semiconductor layer; and
an intermediate layer provided between the semiconductor layer and the ohmic electrode,
wherein the intermediate layer includes a first region whose indium atomic concentration is greater than that of an interior of the semiconductor layer and a second region whose indium atomic concentration is less than that of the first region,
the first and second regions are constituted to contain an oxide of a metal forming the ohmic electrode,
the metal forming the ohmic electrode contains manganese (Mn), and an electrovalence of the manganese increases from the second region toward the first region.