Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts

1. A method of fabricating a polycrystalline diamond compact, comprising:

at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material; and

sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table, wherein the carbon-saturated sintering aid material catalyzes formation of diamond-to-diamond bonding between the plurality of diamond particles used to form the polycrystalline diamond table.

2. The method of claim 1 wherein the sintering aid material comprises a plurality of sintering aid particles, and wherein at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid comprises supersaturating the plurality of sintering aid particles with the non-diamond carbon.

3. The method of claim 2 wherein the plurality of sintering aid particles comprises at least one member selected from the group consisting of cobalt, nickel, iron, copper, aluminum, titanium, tungsten, niobium, zirconium, tantalum, silicon, and boron.

4. The method of claim 2 wherein the plurality of sintering aid particles comprises at least one member selected from the group consisting of copper particles supersaturated with the non-diamond carbon and nickel particles supersaturated with the non-diamond carbon.

5. The method of claim 1 , further comprising:

prior to the act of sintering, assembling the carbon-saturated sintering aid material between a plurality of diamond particles and a substrate to form an assembly; and

wherein sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table comprises subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the plurality of diamond particles with the carbon-saturated sintering aid material to sinter the plurality of diamond particles and form the polycrystalline diamond table that bonds to the substrate.

6. The method of claim 1 , further comprising:

wherein the carbon-saturated sintering aid material comprises carbon-saturated sintering aid particles;

mixing the carbon-saturated sintering aid particles with the plurality of diamond particles to form a mixture;

assembling the mixture with a substrate; and

wherein sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table comprises subjecting the assembly to a high-pressure/high-temperature process effective to form the polycrystalline diamond compact.

7. The method of claim 1 wherein the sintering aid material comprises a plurality of sintering aid particles, and wherein at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material comprises mechanically milling the non-diamond carbon and the plurality of sintering aid particles to form carbon-saturated sintering aid particles.

8. The method of claim 1 , further comprising:

wherein the sintering aid material comprises a plurality of sintering aid particles;

wherein the carbon-saturated sintering aid material comprises a plurality of carbon-saturated sintering aid particles;

wherein at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material comprises mechanically milling a plurality of submicron diamond particles, the non-diamond carbon, and the plurality of sintering aid particles to coat the plurality of carbon-saturated sintering aid particles with at least some of the plurality of submicron diamond particles;

mixing the plurality of carbon-saturated sintering aid particles coated with the plurality of submicron diamond particles with the plurality of diamond particles to form a mixture;

assembling the mixture with a substrate; and

wherein sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table comprises subjecting the assembly to a high-pressure/high-temperature process effective to form the polycrystalline diamond compact.

9. The method of claim 8 wherein the plurality of submicron diamond particles exhibit an average diamond particle size less than about 1 μm.

10. The method of claim 1 wherein the non-diamond carbon comprises at least one member selected from the group consisting of lamp black, graphite, carbon-12 graphite, carbon-13 graphite, carbon nanotubes, graphene, amorphous carbon, and fullerenes.

11. The method of claim 1 , further comprising:

wherein the carbon-saturated sintering aid material comprises carbon-saturated sintering aid particles;

pressing the carbon-saturated sintering aid particles into a green body;

prior to the act of sintering, disposing the green body between a plurality of diamond particles and a substrate to form an assembly; and

wherein sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table comprises subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the plurality of diamond particles with a carbon-saturated sintering aid material from the carbon-saturated sintering aid particles to sinter the plurality of diamond particles and form the polycrystalline diamond table that bonds to the substrate.

12. The method of claim 1 , further comprising:

removing the polycrystalline diamond table from the substrate;

leaching the polycrystalline diamond table to at least partially remove sintering aid material, provided from the carbon-saturated sintering aid material, from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table; and

bonding the at least partially leached polycrystalline diamond table to an additional substrate to form an additional polycrystalline diamond compact.

13. The method of claim 12 , prior to the act of bonding, further comprising at least one of:

heating the at least partially leached polycrystalline diamond table under partial vacuum conditions to remove at least some leaching by-products therefrom; or

removing at least some leaching by-products from the at least partially leached polycrystalline diamond table by chemically cleaning the at least partially leached polycrystalline diamond table.

14. The method of claim 12 wherein the sintering aid material in the polycrystalline diamond table is at least supersaturated with carbon.

15. The method of claim 12 , prior to bonding, further comprising:

positioning a plurality of carbon-saturated infiltrant particles between an additional substrate and the at least partially leached polycrystalline diamond table to form an additional assembly; and

wherein bonding the at least partially leached polycrystalline diamond table to an additional substrate to form an additional polycrystalline diamond compact comprises subjecting the additional assembly to a high-pressure/high-temperature process effective to form an additional polycrystalline diamond compact.

16. The method of claim 15 , wherein subjecting the additional assembly to a high-pressure/high-temperature process comprises infiltrating the at least partially leached polycrystalline diamond table with a carbon-saturated infiltrant from the plurality of carbon-saturated infiltrant particles and a metallic infiltrant from the additional substrate.

17. The method of claim 12 , prior to bonding, further comprising:

positioning a plurality of carbon-supersaturated infiltrant particles between an additional substrate and the at least partially leached polycrystalline diamond table to form an additional assembly; and

wherein bonding the at least partially leached polycrystalline diamond table to an additional substrate to form an additional polycrystalline diamond compact comprises subjecting the additional assembly to a high-pressure/high-temperature process infiltrating the at least partially leached polycrystalline diamond table with a carbon-supersaturated infiltrant from the plurality of carbon-supersaturated infiltrant particles and a metallic infiltrant from the additional substrate.

18. The method of claim 12 , prior to bonding, further comprising:

positioning a plurality of carbon-saturated infiltrant particles coated with diamond particles between an additional substrate and the at least partially leached polycrystalline diamond table to form an additional assembly; and

wherein bonding the at least partially leached polycrystalline diamond table to an additional substrate to form an additional polycrystalline diamond compact comprises subjecting the additional assembly to a high-pressure/high-temperature process effective to infiltrate the at least partially leached polycrystalline diamond table with a carbon-saturated infiltrant from the plurality of carbon-saturated infiltrant particles coated with diamond particles and a metallic infiltrant from the additional substrate.

19. A method of fabricating a polycrystalline diamond body, comprising:

mechanically milling non-diamond carbon and a sintering aid particles to form carbon-saturated sintering aid particles; and

mixing the carbon-saturated sintering aid particles and a plurality of diamond particles to form a mixture; and

subjecting the mixture to a high-pressure/high-temperature process effective to sinter the plurality of diamond particles and form the polycrystalline diamond body, wherein the carbon-saturated sintering aid material catalyzes formation of diamond-to-diamond bonding between the plurality of diamond particles used to form the polycrystalline diamond table.

20. The method of claim 19 wherein mechanically milling non-diamond carbon and a plurality of sintering aid particles to form carbon-saturated sintering aid particles comprises supersaturating the plurality of sintering aid particles with the non-diamond carbon to form carbon-supersaturated sintering aid particles.

21. The method of claim 19 wherein the plurality of sintering aid particles comprises at least one member selected from the group consisting of cobalt, nickel, iron, copper, aluminum, titanium, tungsten, niobium, zirconium, tantalum, silicon, and boron.

22. The method of claim 19 wherein the carbon-saturated sintering aid particles comprise at least one member selected from the group consisting of copper particles supersaturated with the non-diamond carbon and nickel particles supersaturated with the non-diamond carbon.

23. The method of claim 19 :

wherein mechanically milling non-diamond carbon and a plurality of sintering aid particles to form carbon-saturated sintering aid particles comprises mechanically milling a plurality of submicron diamond particles, the non-diamond carbon, and the plurality of sintering aid particles to coat the carbon saturated metal particles with at least some of the plurality of submicron diamond particles;

wherein mixing the carbon-saturated sintering aid particles and a plurality of diamond particles to form a mixture comprises mixing the carbon-saturated sintering aid particles coated with the plurality of submicron diamond particles with a plurality of additional carbon saturated metal particles, and the plurality of diamond particles to form a mixture;

further comprising assembling the mixture onto a substrate to form an assembly; and

wherein subjecting the mixture to a high-pressure/high-temperature process effective to sinter the plurality of diamond particles and form the polycrystalline diamond body comprises subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the plurality of diamond particles with a carbon-saturated sintering aid material at least partially from the plurality of additional carbon-saturated sintering aid particles and the carbon-saturated sintering aid particles coated with the plurality of submicron diamond particles to sinter the plurality of diamond particles and form the polycrystalline diamond body that bonds to the substrate.

24. The method of claim 23 wherein the plurality of submicron diamond particles comprises an average diamond particle size less than about 1 μm.

25. The method of claim 19 wherein the non-diamond carbon comprises at least one member selected from the group consisting of lamp black, graphite, carbon-12 graphite, carbon-13 graphite, carbon nanotubes, graphene, amorphous carbon, and fullerenes.

26. The method of claim 23 , further comprising:

pressing the mixture of the carbon-saturated sintering aid particles coated with the plurality of submicron diamond particles, the plurality of additional carbon saturated metal particles, and the plurality of diamond particles into a green body; and

wherein assembling the mixture onto a substrate to form an assembly comprises assembling the green body with a substrate to form the assembly.

27. The method of claim 19 , further comprising:

leaching the polycrystalline diamond body to at least partially remove sintering aid material, provided from the carbon-saturated sintering aid particles, from the polycrystalline diamond body to form an at least partially leached polycrystalline diamond body; and

bonding the at least partially leached polycrystalline diamond body to a substrate to form a polycrystalline diamond compact.

28. The method of claim 27 wherein the polycrystalline diamond body is a preformed polycrystalline diamond body.

29. The method of claim 27 , prior to the act of bonding, further comprising:

heating the at least partially leached polycrystalline diamond body under partial vacuum conditions to remove at least some leaching by-products therefrom.

30. The method of claim 27 , prior to the act of bonding, further comprising:

removing at least some leaching by-products from the at least partially leached polycrystalline diamond body by chemically cleaning the at least partially leached polycrystalline diamond body.

31. The method of claim 27 , prior to the act of bonding, further comprising:

assembling a plurality of carbon-saturated infiltrant particles between the at least partially leached polycrystalline diamond body and a substrate to form an assembly; and

wherein bonding the at least partially leached polycrystalline diamond body to a substrate to form a polycrystalline diamond compact comprises subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the at least partially leached polycrystalline diamond body with carbon-saturated infiltrant from the plurality of carbon-saturated infiltrant particles.

32. The method of claim 31 , wherein subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the at least partially leached polycrystalline diamond body with infiltrant from the plurality of carbon-saturated infiltrant particles comprises infiltrating the at least partially leached polycrystalline diamond body with the carbon-saturated infiltrant from the plurality of carbon-saturated infiltrant particles and a metallic infiltrant from the substrate.

33. The method of claim 31 , wherein the plurality of carbon-saturated sintering aid particles comprises a plurality of carbon-supersaturated infiltrant particles, and the carbon-saturated infiltrant comprises a carbon-supersaturated infiltrant.

34. A method of fabricating a polycrystalline diamond compact, comprising:

at least saturating a plurality of sintering aid particles with non-diamond carbon to form carbon-saturated sintering aid particles;

sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid particles to form a polycrystalline diamond table, wherein the carbon-saturated sintering aid material catalyzes formation of diamond-to-diamond bonding between the plurality of diamond particles used to form the polycrystalline diamond table;

at least partially leaching a sintering aid material from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table;

forming an assembly including the at least partially leached polycrystalline diamond table positioned at least proximate to a substrate; and

subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate the at least partially leached polycrystalline diamond table with an infiltrant and bond the infiltrated polycrystalline diamond table to the substrate.