Semiconductor light emitting device
A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer, wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.
1. A light emitting device, comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer;
a second conductive type semiconductor layer on the active layer;
an electrode layer on the second conductive type semiconductor layer;
a first electrode on the first conductive type semiconductor layer; and
a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer,
wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.
2. The light emitting device according to claim 1 , wherein the second electrode is disposed on at least a portion of the first conductive type semiconductor layer.
3. The light emitting device according to claim 1 , wherein the first portion of the second electrode contacts an inner side surface of the electrode layer in the opening.
4. The light emitting device according to claim 1 , wherein the electrode layer surrounds the first portion of the second electrode in the opening.
5. The light emitting device according to claim 1 , wherein the second portion of the second electrode contacts at least a portion of a top surface of the electrode layer.
6. The light emitting device according to claim 1 , further comprising:
an insulating layer on the first conductive type semiconductor layer.
7. The light emitting device according to claim 6 , wherein the insulating layer is between the first electrode and the second portion of the second electrode.
8. The light emitting device according to claim 1 , wherein the light insulating layer contacts the electrode layer.
9. A light emitting device, comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer;
a second conductive type semiconductor layer on the active layer;
an electrode layer on the second conductive type semiconductor layer;
a first electrode on the first conductive type semiconductor layer; and
a second electrode on the second conductive type semiconductor layer and in a second opening, the second opening being in the electrode layer,
wherein the second electrode has a first bottom surface with a protrusion and a second bottom surface surrounding the first bottom surface, the electrode layer surrounding a side surface of the protrusion in the second opening and the second bottom surface overlapping at least a portion of the electrode layer.
10. The light emitting device according to claim 9 , wherein at least a portion of the second electrode overlaps at least a portion the first electrode.
11. The light emitting device according to claim 9 , wherein the second electrode is disposed on at least a portion of the first conductive type semiconductor layer.
12. The light emitting device according to claim 1 , further comprising:
an insulating layer between the first electrode and the second electrode.
13. The light emitting device according to claim 12 , wherein the light insulating layer contacts the electrode layer.
14. The light emitting device according to claim 12 , wherein the insulating layer has a first opening, the first electrode upwardly protrudes from the insulating layer through the first opening.
15. A light emitting device, comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer;
a second conductive type semiconductor layer on the active layer;
an insulating layer on the first conductive type semiconductor layer;
an electrode layer on the second conductive type semiconductor layer;
a first electrode on the first conductive type semiconductor layer and in a first opening, the first opening being in the insulating layer; and
a second electrode on the second conductive type semiconductor layer and in a second opening, the second opening being in the electrode layer,
wherein the insulating layer overlaps at least a portion of the second electrode,
wherein the second electrode upwardly protrudes from the electrode layer through the second opening and extends toward the first electrode, and
wherein the electrode layer overlaps at least a portion of the second electrode and surrounds a side surface of the second electrode in the second opening.
16. The light emitting device according to claim 15 , wherein the first electrode upwardly protrudes from the insulating layer through the first opening.
17. The light emitting device according to claim 15 , wherein at least a portion of the second electrode overlaps at least a portion the first electrode.