Semiconductor device and voltage divider
A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.
1. A semiconductor device comprising:
a first resistor formed in a first substrate region and coupled between a first node and an output node;
a second resistor formed in a second substrate region and coupled between a second node and the output node, wherein
the first substrate region receives a first voltage via the first node,
the second resistor receives a second voltage via the second node, and
the second substrate region is connected to the first resistor via a conductive trace;
a plurality of voltage dividing nodes in the first resistor to generate a plurality of divisional voltages; and
a selector configured to couple one of the plurality of voltage dividing nodes to the second substrate region.
2. The semiconductor device according to claim 1 , wherein the plurality of voltage dividing nodes set so that a first electrical resistance between the first node and the output node is substantially equal to a second electrical resistance between the second node and the output node.
3. The semiconductor device according to claim 1 , wherein
the first resistor comprises a plurality of resistor elements coupled in series, and
the plurality of voltage dividing nodes is located between the plurality of resistor elements.
4. The semiconductor device according to claim 1 , further comprising:
a capacitor coupled between the first node and the second substrate region.
5. The semiconductor device according to claim 4 , wherein the capacitor has a first capacitance substantially equal to a second capacitance of a parasitic capacitor in the second substrate region.
6. The semiconductor device according to claim 1 , wherein the first and second resistors are diffusion regions formed in the first and second substrate regions, respectively.
7. The semiconductor device according to claim 1 , wherein the first and second resistors are semiconductor thin films formed through an insulation film in the first and second substrate regions, respectively.
8. The semiconductor device according to claim 1 , wherein the first and the second resistors comprise an N-type well region and a P-type diffusion region, respectively.
9. The semiconductor device according to claim 1 , wherein the output node comprises another conductive trace with a first node and a second node and the conductive trace comprises a third node and a fourth node, and wherein
the first node is connected to the first resistor,
the second node is connected to the second resistor,
the third node is connected to the first resistor, and
the fourth node is connected to the second substrate.
10. The semiconductor device according to claim 1 , wherein the voltage at one of the plurality of voltage dividing nodes is substantially equal to an average voltage of the first node and the second node.
11. A voltage divider comprising:
a first resistor formed in a first substrate region and coupled between a first node and an output node;
a second resistor formed in a second substrate region and coupled between a second node and the output node, wherein
the first substrate region receives a first voltage via the first node,
the second resistor receives a second voltage via the second node, and
the second substrate region is connected to the first resistor via a conductive trace;
a plurality of voltage dividing nodes in the first resistor to generate a plurality of divisional voltages;
a selector configured to couple one of the plurality of voltage dividing nodes to the second substrate region; and
a capacitor with a first terminal coupled to the first node and a second terminal coupled to the first resistor and the second substrate region.
12. The voltage divider according to claim 11 , wherein the plurality of voltage dividing nodes is set so that a first electrical resistance between the first node and the output node is substantially equal to a second electrical resistance between the second node and the output node.
13. The voltage divider according to claim 11 , wherein
the first resistor comprises a plurality of resistor elements coupled in series, and
the plurality of voltage dividing nodes is located between the plurality of resistor elements.
14. The voltage divider according to claim 11 , wherein the capacitor has a first capacitance substantially equal to a second capacitance of a parasitic capacitor in the second substrate region.
15. The voltage divider according to claim 11 , wherein the first and the second resistors are diffusion regions formed in the first and the second substrate regions, respectively.
16. The voltage divider according to claim 11 , wherein the first and the second resistors are semiconductor thin films formed through an insulation film in the first and the second substrate regions, respectively.
17. The voltage divider according to claim 11 , wherein the first and the second resistors comprise an N-type well region and a P-type diffusion region, respectively.
18. The voltage divider according to claim 11 , wherein the output node comprises another conductive trace with a first node and a second node and the conductive trace comprises a third node and a fourth node, and wherein
the first node is connected to the first resistor,
the second node is connected to the second resistor,
the third node is connected to the first resistor, and
the fourth node is connected to the second substrate.