Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
1. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a first layered structure layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
(b) depositing a nucleating layer over at least a portion of said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
(c) depositing a synthetic diamond layer over said nucleating layer; and
(d) depositing a second layered structure layer over said first layered structure layer, said second layered structure layer including at least one layer including said wide-gap semiconductor material.
2. The method of claim 1 , wherein said first layered structure layer has a first growth direction, said second layered structure layer has a second growth direction opposite to the first growth direction, and said synthetic diamond layer has the first growth direction.
3. The method of claim 2 , wherein said nucleation layer has the first growth direction.
4. The method of claim 1 , wherein said nucleating layer includes silicon nitride.
5. The method of claim 1 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
6. The method of claim 4 , wherein said wide-gap semiconductor material is gallium nitride.
7. The method of claim 1 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
8. The method of claim 6 , wherein step (d) is performed using an epitaxial growth technique.
9. The method of claim 6 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.
10. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
(b) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
(c) depositing a synthetic diamond layer over said nucleating layer; and
(d) removing said substrate layer.
11. The method of claim 10 , wherein said nucleating layer includes silicon nitride.
12. The method of claim 10 , wherein said nucleating layer includes polycrystalline silicon.
13. The method of claim 11 , wherein said wide-gap semiconductor material is gallium nitride.
14. The method of claim 13 , further comprising the steps of:
(e) removing a part of said first layered structure layer; and
(f) depositing at least one metal contact on the remaining first layered structure layer.
15. The method of claim 10 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
16. The method of claim 14 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.
17. The method of claim 13 , further comprising the steps of:
(e) removing a part of said first layered structure layer; and
(f) epitaxially growing a second layered structure layer over said first layered structure layer, said second layered structure including at least one layer formed of said wide-gap semiconductor material.
18. The method of claim 17 , further comprising the step of depositing at least one metal contact on the remaining second layered structure layer.
19. The method of claim 18 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, semiconductor lasers, super-luminescent diodes, and light-emitting diodes.
20. The method of claim 17 , wherein said first layered structure layer has a first growth direction, said second layered structure layer has a second growth direction opposite to the first growth direction, and said synthetic diamond layer has the first growth direction.
21. The method of claim 20 , wherein said nucleating layer has the first growth direction.
22. The method of claim 1 , wherein said nucleating layer is polycrystalline silicon.