Semiconductor device having direct connecting structure including first detector, second detector, first transistor, and second transistor elements
View Patent ↗The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column.
1. A semiconductor device comprising:
a first photodiode;
a second photodiode;
a first transistor;
a second transistor;
a third transistor; and
an output line,
wherein an electrode of the first photodiode is directly connected to one of a source and a drain of the first transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to the output line,
wherein an electrode of the second photodiode is directly connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to the output line,
wherein one of a source and a drain of the third transistor is directly connected to the electrode of the first photodiode, and
wherein the other of the source and the drain of the third transistor is directly connected to the electrode of the second photodiode.
2. The semiconductor device according to claim 1 , wherein the off-state current density of the third transistor is 100 yA/μm or less.
3. The semiconductor device according to claim 1 , wherein the third transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and a lower intrinsic carrier density than silicon.
4. The semiconductor device according to claim 3 , wherein the semiconductor material is an oxide semiconductor.
5. A semiconductor device comprising:
a first photodiode;
a second photodiode;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
an output line,
wherein an electrode of the first photodiode is directly connected to one of a source and a drain of the first transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the fourth transistor, so that the electrode of the first photodiode is electrically connected to the gate of the fourth transistor via the first transistor, and
wherein an electrode of the second photodiode is directly connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the fifth transistor, so that the electrode of the second photodiode is electrically connected to the gate of the fifth transistor via the second transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to the output line,
wherein one of a source and a drain of the fifth transistor is electrically connected to the output line,
wherein one of a source and a drain of the third transistor is directly connected to the electrode of the first photodiode, and
wherein the other of the source and the drain of the third transistor is directly connected to the electrode of the second photodiode.
6. The semiconductor device according to claim 5 , further comprising a sixth transistor and a seventh transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to the one of the source and the drain of the fourth transistor and the other of the source and the drain of the sixth transistor is electrically connected to the output line, so that the one of the source and the drain of the fourth transistor is electrically connected to the output line via the sixth transistor, and
wherein one of a source and a drain of the seventh transistor is electrically connected to the one of the source and the drain of the fifth transistor and the other of the source and the drain of the seventh transistor is electrically connected to the output line, so that the one of the source and the drain of the fifth transistor is electrically connected to the output line via the seventh transistor.
7. The semiconductor device according to claim 5 , wherein the off-state current density of the third transistor is 100 yA/μm or less.
8. The semiconductor device according to claim 5 , wherein the third transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and a lower intrinsic carrier density than silicon.
9. The semiconductor device according to claim 8 , wherein the semiconductor material is an oxide semiconductor.
10. A method of driving a semiconductor device comprising a first photodiode, a second photodiode, a first transistor, a second transistor, a third transistor, and an output line, wherein an electrode of the first photodiode is directly connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to the output line, wherein an electrode of the second photodiode is directly connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to the output line, wherein one of a source and a drain of the third transistor is directly connected to the electrode of the first photodiode, and wherein the other of the source and the drain of the third transistor is directly connected to the electrode of the second photodiode, the method comprising the step of:
selecting an on state and an off state of the third transistor in accordance with a luminance of external light.
11. The semiconductor device according to claim 10 , wherein the off-state current density of the third transistor is 100 yA/μm or less.
12. The semiconductor device according to claim 10 , wherein the third transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and a lower intrinsic carrier density than silicon.
13. The semiconductor device according to claim 12 , wherein the semiconductor material is an oxide semiconductor.