Semiconductor light device and fabrication method thereof
The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.
1. A light emitting device, comprising:
an n-type conductive semiconductor layer;
an active layer formed on the n-type conductive semiconductor layer;
a p-type conductive semiconductor layer formed on the active layer and having a Ga vacancy;
a high concentration p-type GaN-based semiconductor layer configured to directly contact the p-type conductive semiconductor layer;
a first metal-Ga compound layer functioning as a first diffusion barrier;
a first metal layer formed on the first metal-Ga compound layer;
a third metal-Al compound layer configured to directly contact the first metal layer and functioning as a second diffusion barrier, the third metal being one selected from the group consisting of Ni, Pt and Pd; and
a conductive oxidation preventive layer formed on the third metal-Al compound layer,
wherein the high concentration p-type GaN-based semiconductor layer has a higher concentration of Ga material than the p-type conductive semiconductor layer,
wherein the high concentration p-type GaN-based semiconductor layer comprises a carrier concentration higher than a carrier concentration of the p-type conductive semiconductor layer,
wherein the first metal-Ga compound layer is disposed between the first metal layer and the high concentration p-type GaN-based semiconductor layer,
wherein the third metal-Al compound layer contacts both a top surface of the first metal layer and a bottom surface of the conductive oxidation preventive layer, and
wherein the first metal-Ga compound layer comprises a compound material of the p-type conductive semiconductor layer and a metal material of the first metal layer.
2. The light emitting device according to claim 1 , wherein the third metal is of a metal or compound having a high reactivity with Al.
3. The light emitting device according to claim 1 , wherein the conductive oxidation preventive layer is of Au, or is of a multi-metal or compound of two or more kinds containing Au.
4. The light emitting device according to claim 1 , wherein the first metal-Ga compound layer, the first metal layer, the third metal-Al compound layer, and the conductive oxidation preventive layer form an electrode.
5. The light emitting device according to claim 1 , wherein the n-type conductive semiconductor layer comprises at least one of an Al material or an In material.
6. The light emitting device according to claim 1 , wherein the conductive oxidation preventive layer comprises one of Au, a multi-metal, and a compound of two or more kinds containing Au.
7. The light emitting device according to claim 1 , wherein the third metal-Al compound layer is a metal layer.
8. The light emitting device according to claim 1 , wherein the high concentration p-type GaN-based semiconductor layer comprises a carrier concentration of more than 10 18 cm −3 .
9. The light emitting device according to claim 1 , wherein high concentration the p-type GaN-based semiconductor layer and the first metal-Ga compound layer are formed using the p-type conductive semiconductor layer and the first metal layer.
10. The light emitting device according to claim 1 , wherein the first metal layer comprises W.
11. The light emitting device according to claim 1 , wherein the first metal-Ga compound layer is directly disposed on the high concentration p-type GaN-based semiconductor layer.
12. The light emitting device according to claim 1 , wherein a lateral width of the high concentration p-type GaN-based semiconductor layer is substantially the same with a lateral width of the first metal layer.
13. The light emitting device according to claim 1 , wherein a lateral width of the high concentration p-type GaN-based semiconductor layer is substantially the same with a lateral width of the first metal-Ga compound layer.