Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic device

1. A solid-state imaging device comprising:

a semiconductor substrate;

pixels each including a photoelectric conversion unit formed in the semiconductor substrate;

a trench that is formed in the semiconductor substrate and separates the pixels that are adjacent; and

a color filter that is formed above the photoelectric conversion unit of each of the pixels and buried in at least a part of the trench,

wherein a color filter of another color is buried in the trench between a pixel having a color of highest sensitivity and an adjacent pixel having the other color.

2. The solid-state imaging device according to claim 1 ,

wherein the color filter of another color has a color of low sensitivity.

3. The solid-state imaging device according to claim 1 ,

wherein a color array of pixels is a Bayer array, and a red color filter or a blue color filter having a color of an adjacent pixel is buried in the trench around a green pixel.

4. The solid-state imaging device according to claim 1 ,

wherein a color array of pixels is a clear bit array, a green color filter is buried in a trench between pixels adjacent to a green pixel, and a red color filter or a blue color filter having a color of a pixel adjacent to the green pixel is buried in a trench between pixels that is not adjacent to the green pixel.

5. The solid-state imaging device according to claim 1 ,

wherein a color array of pixels includes a white pixel on which a color filter is not disposed, and a color filter having a color of a pixel adjacent to the white pixel is buried in a trench between pixels that is not adjacent to the white pixel.

6. The solid-state imaging device according to claim 1 ,

wherein a color filter having an identical color is buried in a trench between pixels in which pixels having an identical color are adjacent to each other.

7. A method of manufacturing a solid-state imaging device, comprising:

forming a photoelectric conversion unit included in pixels in a semiconductor substrate;

forming a trench separating the pixels that are adjacent in the semiconductor substrate; and

forming a color filter above the photoelectric conversion unit of each of the pixels, and burying the color filter in at least a part of the trench, wherein a color filter of another color is buried in the trench between a pixel having a color of highest sensitivity and an adjacent pixel having the other color.

8. The method of manufacturing the solid-state imaging device according to claim 7 ,

wherein the forming the color filter includes forming a color filter having a color of highest sensitivity among color filters of a plurality of colors after the color filters of the respective colors are formed.

9. The method of manufacturing the solid-state imaging device according to claim 7 , wherein the color filter of another color has a color of low sensitivity.

10. The method of manufacturing the solid-state imaging device according to claim 7 ,

wherein a color array of pixels is a Bayer array, and a red color filter or a blue color filter having a color of an adjacent pixel is buried in the trench around a green pixel.

11. The method of manufacturing the solid-state imaging device according to claim 7 ,

wherein a color array of pixels is a clear bit array, a green color filter is buried in a trench between pixels adjacent to a green pixel, and a red color filter or a blue color filter having a color of a pixel adjacent to the green pixel is buried in a trench between pixels that is not adjacent to the green pixel.

12. The method of manufacturing the solid-state imaging device according to claim 7 ,

wherein a color array of pixels includes a white pixel on which a color filter is not disposed, and a color filter having a color of a pixel adjacent to the white pixel is buried in a trench between pixels that is not adjacent to the white pixel.

13. The method of manufacturing the solid-state imaging device according to claim 7 ,

wherein a color filter having an identical color is buried in a trench between pixels in which pixels having an identical color are adjacent to each other.

14. An electronic device comprising:

an optical system;

a solid-state imaging device including a semiconductor substrate, pixels each including a photoelectric conversion unit formed in the semiconductor substrate, a trench that is formed in the semiconductor substrate and separates the pixels that are adjacent, and a color filter that is formed above the photoelectric conversion unit of each of the pixels and buried in at least a part of the trench, wherein a color filter of another color is buried in the trench between a pixel having a color of highest sensitivity and an adjacent pixel having the other color; and

a signal processing circuit that processes an output signal of the solid-state imaging device.

15. The electronic device according to claim 14 ,

wherein the color filter of another color has a color of low sensitivity.

16. The electronic device according to claim 14 ,

wherein a color array of pixels is a Bayer array, and a red color filter or a blue color filter having a color of an adjacent pixel is buried in the trench around a green pixel.

17. The electronic device according to claim 14 ,

wherein a color array of pixels is a clear bit array, a green color filter is buried in a trench between pixels adjacent to a green pixel, and a red color filter or a blue color filter having a color of a pixel adjacent to the green pixel is buried in a trench between pixels that is not adjacent to the green pixel.

18. The electronic device according to claim 14 ,

wherein a color array of pixels includes a white pixel on which a color filter is not disposed, and a color filter having a color of a pixel adjacent to the white pixel is buried in a trench between pixels that is not adjacent to the white pixel.

19. The electronic device according to claim 14 ,

wherein a color filter having an identical color is buried in a trench between pixels in which pixels having an identical color are adjacent to each other.