Nano-fabricated structured diamond abrasive article
View Patent ↗The present invention describes a microfabricated or nanofabricated structured diamond abrasive with a high surface density array of geometrical protrusions of pyramidal, truncated pyramidal or other shape, of designed shapes, sizes and placements, which provides for improved conditioning of CMP polishing pads, or other abrasive roles. Three methods of fabricating the structured diamond abrasive are described: molding of diamond into an array of grooves of various shapes and sizes etched into Si or another substrate material, with subsequent transferal onto another substrate and removal of the Si; etching of an array of geometrical protrusions into a thick diamond layer, and depositing a thick diamond layer over a substrate pre-patterned (or pre-structured) with an array of geometrical protrusions of designed sizes, shapes and placements on the surface.
1. A method comprising:
providing a substrate comprising a first surface and a second surface; selecting at least one first size, at least one first shape, and at least one first location on said first surface;
providing at least one mold on said first surface, said at least one mold comprising at least one second size, said at least one second shape, and said at least on second location on said first surface, wherein said at least one second size is the same as said at least one first size, said at least one second shape is the same as said at least one first shape, and said at least one second location is the same as said at least one first location;
depositing a first layer comprising diamond on said first surface, said layer at least partially filling said at least one mold;
removing at least a portion of said mold;
adhering a second layer to said second surface;
wherein at least one of said at least one first size, at least one first shape, and at least one first location on said first surface is selected to provide a desired abrasion rate.
2. The method according to claim 1 , wherein said substrate comprises silicon, tungsten, or titanium.
3. The method according to claim 1 , wherein said first layer comprises ultrananocrystalline diamond.
4. The method according to claim 1 , wherein said first layer diamond further comprises an average grain size less than 100 nm.
5. The method according to claim 1 , wherein said depositing a first layer comprises hot filament chemical vapor deposition.
6. The method according to claim 1 , wherein said providing at least one mold comprises etching.
7. The method according to claim 1 , wherein said providing at least one mold comprises etching, said etching comprising a crystal orientation dependent etchant.
8. The method according to claim 6 , wherein said providing at least one mold further comprises oxidation.
9. The method according to claim 1 , wherein said first layer comprises at least one height from said first surface, said at least one height ranging from 0.1 μm to 5000 μm.
10. The method according to claim 1 , wherein said first layer comprises at least one height from said first surface, said at least one height ranging from 0.1 μm to 500 μm.
11. The method according to claim 1 , wherein said first layer comprises at least one height from said first surface, said at least one height ranging from 1 μm to 50 μm.
12. The method according to claim 1 , wherein said first layer comprises at least one pyramid, said at least one pyramid comprising three sides or four sides or five sides or six sides.
13. The method according to claim 1 , wherein said first layer comprises at least one rounded island comprising substantially flat tops.
14. A method comprising:
providing a substrate comprising a first surface and a second surface;
selecting at least one first size, at least one first shape, and at least one first location on said first surface;
depositing a first layer comprising diamond on said first surface; and
patterning said first layer to form at least one protrusion comprising at least one second size, at least one second shape, and at least one second location on said first surface, wherein said at least one second size is the same as said at least one first size, said at least one second shape is the same as said at least one first shape, and said at least one second location is the same as said at least one first location;
wherein at least one of said at least one first size, at least one first shape, and at least one first location on said first surface is selected to provide a desired abrasion rate.
15. The method according to claim 14 , further comprising adhering a second layer to said second surface.
16. The method according to claim 14 , further comprising depositing a second layer on said first layer, said second layer comprising silicon oxide.
17. The method according to claim 14 , wherein said substrate comprises silicon.
18. The method according to claim 14 , wherein said first layer comprises ultrananocrystalline diamond.
19. The method according to claim 14 , wherein said first layer diamond further comprises an average grain size less than 100 nm.
20. The method according to claim 14 , wherein said at least one second size comprises a largest size and a smallest size, said largest size and said smallest size not being equal.
21. The method according to claim 14 , wherein said first layer comprises at least one height from said first surface, said at least one height ranging from 0.1 μm to 500 μm.
22. The method according to claim 14 , wherein said first layer comprises at least one height from said first surface, said at least one height ranging from 1 μm to 50 μm.
23. The method according to claim 14 , wherein said at least one protrusion comprises at least one pyramid, said at least one pyramid comprising three sides or four sides or five sides or six sides.