Semiconductor device with heat removal structure and related production method
According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.
1. A semiconductor device composite structure which comprises an initial substrate with discrete, integrated device components and a heat removal structure, wherein the heat removal structure comprises:
a bond layer which is applied to the initial substrate or to the devices;
a heat removal layer which is applied to the bond layer, and consists of a material with at least double the specific heat conductivity of the average specific heat conductivity of the initial substrate or the devices; and
one or more metallic thermal bridges which thermally connect the devices with the heat removal layer via the bond layer, characterized in that the thermal bridges are designed as vertical through connections (vias) through the bond and heat removal layers.
2. The semiconductor device composite structure according to claim 1 , wherein the bond layer is applied to the initial substrate using an adhesion promoter layer.
3. The semiconductor device composite structure according to claim 1 , wherein the specific heat conductivity of the heat removal layer is at least three times as high as the average specific heat conductivity of the initial substrate.
4. The semiconductor device composite structure according claim 1 , wherein the average specific heat conductivity of the heat removal layer is ≧250 Wm−1K−1.
5. The semiconductor device composite structure according to claim 1 , wherein the heat removal layer has a layer thickness ranging from 1 μm to 1000 μm.
6. The semiconductor device composite structure according to claim 1 , wherein the heat removal layer partly or entirely consists of carbon with a diamond structure or silicon carbide.
7. The semiconductor device composite structure according to claim 1 , wherein the bond layer has a layer thickness ranging from 50 nm to 50 μm.
8. The semiconductor device composite structure according to claim 1 , wherein the bond layer has a specific heat conductivity of ≦5 Wm−1K−1.
9. The semiconductor device composite structure according to claim 1 , wherein the bond layer consists of an organic polymer.
10. The semiconductor device composite structure according to claim 9 , wherein the bond layer consists of a polymer based on benzocyclobutene.
11. The semiconductor device composite structure according to claim 1 , wherein the thermal bridges consist of a metal or alloy, the specific heat conductivity of which is ≧200 Wm−1K−1.
12. The semiconductor device composite structure according to claim 11 , wherein the thermal bridges consist of gold, copper or aluminium.
13. The semiconductor device composite structure according to claim 1 , wherein the heat removal structure is arranged on both sides of the devices on their front and rear side in relation to the initial substrate.
14. The semiconductor device composite structure according to claim 1 , wherein the base area of a metallic thermal bridge covers at least 40% of the respective front surface of a device.