Semiconductor device and semiconductor element
A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off.
1. A semiconductor device comprising:
a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of said first element portion is controlled by a signal from said first gate, and wherein the turning on and off of said second element portion is controlled by a signal from said second gate; and
signal transmission circuitry connected to said first gate and said second gate and configured to transmit a signal to said first gate and said second gate so that when said semiconductor element is to be turned on, said first element portion and said second element portion are simultaneously turned on, and so that when said semiconductor element is to be turned off, said second element portion is turned off a delay time after said first element portion is turned off, wherein
said second element portion is formed to surround said first element portion.
2. The semiconductor device according to claim 1 , wherein said second element portion is larger in area than said first element portion.
3. The semiconductor device according to claim 1 , wherein said second element portion is adapted to have a higher switching speed than said first element portion.
4. The semiconductor device according to claim 3 , wherein:
said semiconductor element is a conductivity modulation type semiconductor element in which carriers are injected from collector layers into a drift layer;
said first element portion has a first collector layer formed therein;
said second element portion has a second collector layer formed therein; and
said second collector layer has a lower impurity concentration than said first collector layer.
5. The semiconductor device according to claim 3 , wherein carrier lifetime killers are formed in said second element portion, and the density of carrier lifetime killers in said second element portion is higher than that in said first element portion.
6. The semiconductor device according to claim 1 , wherein said semiconductor element has a sense pad formed thereon.
7. The semiconductor device according to claim 1 , wherein said semiconductor element is formed of a wide bandgap semiconductor.
8. The semiconductor device according to claim 7 , wherein said wide bandgap semiconductor is silicon carbide, gallium nitride-based material, or diamond.