Optical semiconductor device
An optical semiconductor device includes a laser oscillator on a semiconductor substrate; and an optical modulator on the semiconductor substrate. The laser oscillator includes a pair of reflecting mirrors at least one of which is a loop mirror, and the loop mirror includes a loop waveguide and a plurality of first ring resonators serially inserted in the loop waveguide. The optical modulator includes a plurality of second ring resonators connected in cascade along a modulator waveguide. A transmission band width of the first ring resonator is set greater than a transmission band width of the second ring resonator.
1. An optical semiconductor device comprising:
a laser oscillator on a semiconductor substrate; and
an optical modulator on the semiconductor substrate,
wherein the laser oscillator includes a pair of reflecting mirrors at least one of which is a loop mirror, and the loop mirror includes a loop waveguide and a plurality of first ring resonators serially inserted in the loop waveguide,
wherein the optical modulator includes a plurality of second ring resonators connected in cascade along a modulator waveguide,
wherein a transmission band width of the first ring resonator is set greater than a transmission band width of the second ring resonator.
2. The optical semiconductor device as claimed in claim 1 , wherein a gap width between the loop waveguide and the first ring resonator is set less than a gap width between the modulator waveguide and the second ring resonator.
3. The optical semiconductor device as claimed in claim 1 , wherein the loop waveguide includes a first waveguide part configured to be optically coupled with the first ring resonator by a first width, and a second waveguide part having a second width greater than the first width.
4. The optical semiconductor device as claimed in claim 3 , wherein the loop waveguide further includes a third waveguide part configured to have a tapered shape and to connect the first waveguide part with the second waveguide part.
5. The optical semiconductor device as claimed in claim 1 , wherein the loop waveguide has an impurity-doped region in a part of the loop waveguide adjacent to each of the first ring resonators.
6. The optical semiconductor device as claimed in claim 1 , wherein the loop waveguide has an antireflection film covering the part of the loop waveguide at a part adjacent to each of the first ring resonators.
7. The optical semiconductor device as claimed in claim 1 , wherein the loop waveguide has a reflection-suppressed region having a waveguide core broadened at a part facing each of the first ring resonators.
8. The optical semiconductor device as claimed in claim 1 , wherein each of the first ring resonators and the second ring resonators has a racetrack shape including a line part,
wherein a length of the line part of the racetrack of the first ring resonators is greater than a length of the line part of the racetrack of the second ring resonators.
9. The optical semiconductor device as claimed in claim 1 , wherein the optical modulator includes a Mach-Zehnder interferometer,
wherein the laser oscillator is placed in a region enclosed by two arms of the Mach-Zehnder interferometer.
10. The optical semiconductor device as claimed in claim 9 , wherein the first ring resonators of the laser oscillator and the second ring resonators of the optical modulator are alternately arranged.