Heat dissipation base and electronic device
A brazing material includes silver and copper as main components; at least one element A selected from indium, zinc, and tin; at least one element B selected from titanium, zirconium, hafnium, and niobium; and at least one element C selected from molybdenum, osmium, rhenium, and tungsten. The content of copper is not less than 35% by mass and not more than 50% by mass, based on the total amount of silver, copper, and the elements A, B and C. A heat dissipation base includes a supporting substrate, circuit members on a first main surface of the substrate, and a heat dissipation member on a second main surface opposite to the first main surface. The circuit members are joined to the supporting substrate by a joining layer composed of the brazing material.
1. A heat dissipation base comprising:
a supporting substrate containing ceramic material;
a plurality of circuit members containing copper and formed on a first main surface of the supporting substrate; and
a heat dissipation member formed on a second main surface of the supporting substrate, the second main surface being opposite to the first main surface, wherein
the plurality of the circuit members are arranged on the first main surface of the supporting substrate, and each of the plurality of circuit members and the heat dissipation member is joined to the supporting substrate through a joining layer composed of a brazing material,
wherein the brazing material comprises silver and copper as main components; at least one element A selected from indium, zinc and tin; at least one element B selected from titanium, zirconium, hafnium and niobium; and at least one element C selected from molybdenum, osmium, rhenium and tungsten,
wherein a content of copper is not less than 35% by mass and not more than 50% by mass, based on the total amount of silver, copper, and the elements A, B and C, and
wherein a content of carbon is 0.05% by mass or less.
2. The heat dissipation base according to claim 1 , wherein the content of oxygen in the brazing material is 2% by mass or less.
3. The heat dissipation base according to claim 1 , wherein contents of the element A, the element B, and the element C are not less than 2% by mass and not more than 22% by mass, not less than 1% by mass and not more than 8% by mass, and not less than 1% by mass and not more than 8% by mass, respectively, based on the total amount of silver, copper, and the elements A, B and C.
4. The heat dissipation base according to claim 1 , wherein the element C in the joining layer has an average crystal grain diameter of not less than 3 μm and not more than 10 μm.
5. The heat dissipation base according to claim 1 , wherein the supporting substrate contains a ceramic material containing silicon nitride or aluminum nitride as a main component.
6. The heat dissipation base according to claim 1 , wherein the element B is chemically bonded to a metal element in a region near the first main surface of the supporting substrate.
7. An electronic device comprising:
the heat dissipation base according to claim 1 ; and
an electronic component mounted on the circuit members of the heat dissipation base.