Connection arrangement for semiconductor power modules

1. A semiconductor power module comprising:

at least two sub modules, each sub module including at least one respective transistor having a collector, an emitter, and a gate; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components,

wherein sub units having mutually similar electrical characteristics are grouped into a respective group of sub units, wherein each group of sub units has a respective connection arrangement comprising:

a sub module group collector terminal unit for connecting the collector terminal units of the sub modules of the group collectively to external circuit components;

a sub module group emitter terminal unit for connecting the at least two emitter terminal units of the sub modules of the group individually to external circuit components; and

a sub module group gate terminal unit for connecting the at least two gate terminal units of the at least two sub modules of the group individually to external circuit components.

2. The semiconductor power module in accordance with claim 1 , wherein the at least one respective transistor is an Insulated Gate Bipolar Transistor.

3. The semiconductor power module in accordance with claim 1 , wherein the at least one respective transistor is a bipolar transistor.

4. The semiconductor power module in accordance with claim 1 , wherein each sub module includes emitter-gate terminal pairs.

5. The semiconductor power module in accordance with claim 1 ,

wherein each sub module includes an emitter-gate terminal pair, and

wherein emitters of at least two transistors within the sub module are connected to each other and gates of the at least two transistors within the sub module are connected to each other.

6. The semiconductor power module in accordance with claim 1 , comprising:

an emitter-gate terminal pair of a group of transistors having a mutually similar current sharing behavior, wherein the emitters of the group of transistors having a mutually similar current sharing behavior are connected to each other, and wherein the gates of the group of transistors having a mutually similar current sharing behavior are connected to each other.

7. A semiconductor power module comprising:

at least six sub modules, each sub module including at least one respective transistor having a collector, an emitter, and a gate; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

8. A semiconductor power module comprising:

at least two sub modules, each sub module including at least one respective transistor having a collector, an emitter, a gate, and emitter-gate terminal pairs; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

9. The semiconductor power module in accordance with claim 8 , wherein each of the at least two sub modules includes six individual transistors.

10. The semiconductor power module in accordance with claim 8 , wherein each of the at least two sub modules includes a plurality of transistors having mutually similar electrical characteristics.

11. The semiconductor power module in accordance with claim 8 , wherein the at least two sub modules includes six sub modules.

12. The semiconductor power module in accordance with claim 8 , wherein sub units having mutually similar electrical characteristics are grouped into a respective group of sub units, wherein each group of sub units has a respective connection arrangement comprising:

a sub module group collector terminal unit for connecting the collector terminal units of the sub modules of the group collectively to external circuit components;

a sub module group emitter terminal unit for connecting the at least two emitter terminal units of the sub modules of the group individually to external circuit components; and

a sub module group gate terminal unit for connecting the at least two gate terminal units of the at least two sub modules of the group individually to external circuit components.

13. The semiconductor power module in accordance with claim 8 , wherein the at least one respective transistor is an Insulated Gate Bipolar Transistor.

14. The semiconductor power module in accordance with claim 8 , wherein the at least one respective transistor is a bipolar transistor.

15. The semiconductor power module in accordance with claim 8 , comprising:

an emitter-gate terminal pair of a sub module of the semiconductor power module,

wherein emitters of at least two transistors within the sub module are connected to each other and gates of at least two transistors within the sub module are connected to each other.

16. The semiconductor power module in accordance with claim 8 , comprising:

an emitter-gate terminal pair of a group of transistors having a mutually similar current sharing behavior, wherein the emitters of the group of transistors having a mutually similar current sharing behavior are connected to each other, and wherein the gates of the group of transistors having a mutually similar current sharing behavior are connected to each other.

17. A semiconductor power module comprising:

at least two sub modules, each sub module including at least one respective transistor having a collector, an emitter, a gate, and an emitter-gate terminal pair; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components,

wherein emitters of at least two transistors within the sub module are connected to each other and gates of at least two transistors within the sub module are connected to each other.

18. The semiconductor power module in accordance with claim 17 , wherein sub units having mutually similar electrical characteristics are grouped into a respective group of sub units, wherein each group of sub units has a respective connection arrangement comprising:

a sub module group collector terminal unit for connecting the collector terminal units of the sub modules of the group collectively to external circuit components;

a sub module group emitter terminal unit for connecting the at least two emitter terminal units of the sub modules of the group individually to external circuit components; and

a sub module group gate terminal unit for connecting the at least two gate terminal units of the at least two sub modules of the group individually to external circuit components.

19. The semiconductor power module in accordance with claim 17 , wherein the at least one respective transistor is an Insulated Gate Bipolar Transistor.

20. The semiconductor power module in accordance with claim 17 , wherein the at least one respective transistor is a bipolar transistor.

21. The semiconductor power module in accordance with claim 17 , wherein each sub module includes emitter-gate terminal pairs.

22. The semiconductor power module in accordance with claim 17 , comprising:

an emitter-gate terminal pair of a group of transistors having a mutually similar current sharing behavior, wherein the emitters of the group of transistors having a mutually similar current sharing behavior are connected to each other, and wherein the gates of the group of transistors having a mutually similar current sharing behavior are connected to each other.

23. A semiconductor power module comprising:

at least two sub modules, each sub module including at least one respective transistor having a collector, an emitter, and a gate;

an emitter-gate terminal pair of a group of transistors having a mutually similar current sharing behavior, wherein the emitters of the group of transistors having a mutually similar current sharing behavior are connected to each other, and wherein the gates of the group of transistors having a mutually similar current sharing behavior are connected to each other; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

24. A semiconductor power module comprising:

at least two sub modules, each sub module including at least one respective transistor having a collector, an emitter, and a gate, wherein each of the at least two sub modules includes six individual transistors; and

a connection arrangement, wherein said connection arrangement comprises:

a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components;

at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components; and

at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.