Visible and near-infrared radiation detector
The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.
1. A detector of visible and near-infrared radiation comprising:
a layer of a material optimized for near-infrared detection;
a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection;
a silicon substrate having a frontside covered with the layer of the material optimized for near-infrared detection;
a first readout circuit for reading the near-infrared photosensitive element, formed on the frontside of the silicon substrate;
four visible photosensitive elements, formed in the silicon substrate, one of the visible photosensitive elements being arranged in front of the near-infrared photosensitive element; and
three interference filters respectively associated with three elementary colors and arranged at a backside of the silicon substrate to define a pixel quadruplet, each interference filter comprising an alternation of metal layers and of dielectric layers,
wherein a first pixel of the pixel quadruplet, comprising the near-infrared photosensitive element and one of the visible photosensitive elements, is devoid of interference filter, and the three other pixels of the pixel quadruplet, respectively comprising the three other visible photosensitive elements, are respectively provided with the three interference filters, and
the near-infrared photosensitive element of the first pixel extends over one of the three other pixels.
2. The detector according to claim 1 , wherein the first readout circuit is common to the visible and near-infrared photosensitive elements of the first pixel.
3. The detector according to claim 1 , further comprising a second readout circuit for reading the visible photosensitive element of the first pixel separate from the second readout circuit for reading the near-infrared photosensitive element.
4. The detector according to claim 1 , comprising a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection in one of the three other pixels.
5. The detector according to claim 1 , comprising four near-infrared photosensitive elements formed in the layer of the material optimized for near-infrared detection, respectively facing the four visible photosensitive elements.
6. A method for producing a visible and near-infrared detector comprising the steps of:
providing a layer of a material optimized for near-infrared detection provided with a near-infrared photosensitive element;
forming a contact metallization of the near-infrared photosensitive element on a frontside of the layer of the material optimized for near-infrared detection;
providing a silicon substrate provided with a visible photosensitive element;
covering the frontside of the silicon substrate with an interconnect layer while leaving a last metallization level exposed; and
placing into contact the frontsides of the layer of the material optimized for near-infrared detection and of the silicon substrate to perform a metal-to-metal bonding of the last metallization level of the interconnect layer with the contact metallization of the near-infrared photosensitive element.