Reverse conducting IGBT
A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode.
1. A reverse conducting IGBT comprising:
an insulated gate;
a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and
an emitter electrode provided on a surface of the semiconductor layer,
the first conductivity type drift region of the semiconductor layer contacting the insulated gate, the second conductivity type body region of the semiconductor layer being provided on the drift region and contacting the insulated gate, the first conductivity type emitter region of the semiconductor layer being provided on the body region and contacting the insulated gate, and the second conductivity type intermediate region of the semiconductor layer being provided on the emitter region and being interposed between the emitter region and the emitter electrode.
2. The reverse conducting IGBT according to claim 1 , wherein
the intermediate region is configured to punch through when the intermediate region and the emitter region are inversely-biased.
3. The reverse conducting IGBT according to claim 1 , wherein
an impurity concentration of the intermediate region is lower than an impurity concentration of the emitter region.
4. The reverse conducting IGBT according to claim 1 , further comprising:
a second conductivity type collector region provided on one portion below the drift region in the semiconductor layer; and
a first conductivity type cathode region provided on another portion below the drift region in the semiconductor layer.
5. The reverse conducting IGBT according to claim 4 , wherein
when an area where the collector region is present is an IGBT area and an area where the cathode region is present is a diode region when the semiconductor layer is viewed from above, the intermediate region is provided in at least the diode area.
6. The reverse conducting IGBT according to claim 5 , wherein
the intermediate region is also provided in the IGBT area.
7. The reverse conducting IGBT according to claim 1 , wherein
the insulated gate has a trench gate that extends from the surface of the semiconductor layer toward a deep portion of the semiconductor layer.