Conductive film having oxide layer and method of manufacturing the same

1. A conductive film, comprising:

a substrate;

a first conductive layer formed on the substrate; and

a patterned second conductive layer (M 1 ) formed on the first conductive layer,

wherein oxide layers ((M 2 ) x O y ) are formed on top and side surfaces of the second conductive layer (M 1 ),

wherein M 1 includes copper (Cu), aluminum (Al), molybdenum (Mb), chromium (Cr), magnesium (Mg), calcium (Ca), sodium (Na), potassium (K), titanium (Ti), indium (In), yttrium (Y), lithium (Li), gadolinium (Gd), silver (Ag), tin (Sn), lead (Pb) or an alloy containing two or more thereof,

M 1 and M 2 are the same with each other,

x is a number from 1 to 3, and

y is a number from 1 to 4.

2. The conductive film according to claim 1 , wherein the substrate includes one or more resins selected from the group consisting of polyesters, acetates, polyether sulfones, polycarbonates, polyamides, polyimides, (meth)acrylates, polyvinyl chlorides, polyvinylidene chlorides, polystyrenes, polyvinyl alcohols, polyacrylates and polyphenylene sulfides.

3. The conductive film according to claim 1 , wherein the first conductive layer is formed of ITO or a zinc oxide-based thin film doped with an element M (ZnO:M), and the element M is a group 13 element or a transition metal having an oxidation number of +3.

4. The conductive film according to claim 1 , further comprising a protective layer formed on the second conductive layer having an oxide layer.

5. The conductive film according to claim 4 , wherein the protective layer includes a least one of ITO, IZO and a metal.

6. The conductive film according to claim 1 , wherein the second conductive layer has a thickness of 1 nm to 1 mm.

7. The conductive film according to claim 1 , wherein the second conductive layer has a patterned structure, in which a width of a pattern is 50 nm to 2 μm, and a distance between patterns is 50 μm to 5 mm.

8. The conductive film according to claim 1 , wherein the oxide layer formed on the second conductive layer includes Cu 2 O.

9. The conductive film according to claim 1 , wherein the oxide layer formed on the second conductive layer has a thickness of 1 to 100 nm.

10. A display device comprising a conductive film according to claim 1 .

11. A lighting apparatus comprising a conductive film according to claim 1 .

12. A method of manufacturing a conductive film, comprising:

forming a first conductive layer and a second conductive layer (M 1 ) on a substrate; and

forming a patterned second conductive layer (M 1 ) having oxide layers ((M 2 ) x O y ) on top and side surfaces thereof by thermal or plasma treatment,

wherein M 1 includes copper (Cu), aluminum (Al), molybdenum (Mb), chromium (Cr), magnesium (Mg), calcium (Ca), sodium (Na), potassium (K), titanium (Ti), indium (In), yttrium (Y), lithium (Li), gadolinium (Gd), silver (Ag), tin (Sn), lead (Pb) or an alloy containing two or more thereof,

M 1 and M 2 are the same with each other,

x is a number from 1 to 3 , and

y is a number from 1 to 4.

13. The method according to claim 12 , comprising:

forming first and second conductive layers on a substrate;

forming an oxide layer on a surface of the second conductive layer;

patterning the second conductive layer having the oxide layer; and

forming an oxide layer on a side surface of the patterned second conductive layer.

14. The method according to claim 12 , comprising:

forming first and second conductive layers on a substrate;

patterning the second conductive layer; and

forming oxide layers on top and side surfaces of the patterned second conductive layer.

15. The method according to claim 12 , wherein the forming of the first and second conductive layers on the substrate is performed by thermal deposition, vacuum deposition, sputtering, electron beam deposition or ion beam deposition.

16. The method according to claim 12 , wherein the thermal treatment is performed at a temperature of 130 to 200 ° C.