IP Library Granted Patent US 9,105,905
Granted Patent B2
US 9,105,905 · App. 13/755,173 · Granted Aug 11, 2015

Anode material having a uniform metal-semiconductor alloy layer

Inventors: Murali Ramasubramanian (Fremont, CA); Robert M. Spotnitz (Pleasanton, CA)
Assignee: ENOVIX CORPORATION
H01M4/134H01M4/0404H01M4/0409H01M4/0457H01M4/362H01M4/38H01M10/052H01M2004/025H01M2004/027Y02E60/122
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Quick Facts
Patent No.
US 9,105,905
App. No.
13/755,173
Granted
Aug 11, 2015
Kind
B2
Abstract

The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a solution containing metals ions and a dissolution component. When the anode material is contacted with the solution, the dissolution component dissolves a part of the semiconductor material in the anode material and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer. The anode material of the present invention can be in a monolithic form or a particle form. When the anode material is in a particle form, the particulate anode material can be further shaped and sintered to agglomerate the particulate anode material.

Claims (20)

1. A secondary battery comprising an anode, a cathode and a non-aqueous electrolyte, the anode comprising a monolithic porous mass of a sintered particulate material wherein the particulate material comprises a semiconductor material core and a metal-semiconductor alloy layer thereon and has a diameter of about 0.001 micrometers to 100 micrometers, the volume of the metal-semiconductor alloy layer is about 0.1% to 5% of the total particle volume and the metal-semiconductor alloy layer provides adhesion and cohesion of the particles in the porous mass.

2. The secondary battery of claim 1 wherein the semiconductor material comprises silicon or germanium.

3. The secondary battery of claim 2 wherein the metal of the metal-semiconductor alloy is nickel, copper, cobalt, silver, gold, platinum, palladium or rhodium.

4. The secondary battery of claim 2 wherein the metal of the metal-semiconductor alloy is nickel.

5. The secondary battery of claim 1 wherein the metal of the metal-semiconductor alloy is nickel, copper, cobalt, silver, gold, platinum, palladium or rhodium.

6. The secondary battery of claim 1 wherein the metal of the metal-semiconductor alloy is nickel.

7. The secondary battery of claim 1 the metal-semiconductor alloy layer has a thickness of about 100 nanometers to 3 micrometers.

8. The secondary battery of claim 1 wherein the secondary battery comprises an anode current collector and the anode is formed on the anode current collector.

9. The secondary battery of claim 1 wherein porous mass of a sintered particulate material is in the shape of a pillar.

10. The secondary battery of claim 1 wherein the secondary battery is a lithium ion battery.

11. The secondary battery of claim 10 wherein the semiconductor material comprises silicon or germanium.

12. The secondary battery of claim 11 wherein the metal of the metal-semiconductor alloy is nickel, copper, cobalt, silver, gold, platinum, palladium or rhodium.

13. The secondary battery of claim 11 wherein the metal of the metal-semiconductor alloy is nickel.

14. The secondary battery of claim 10 wherein the metal of the metal-semiconductor alloy is nickel, copper, cobalt, silver, gold, platinum, palladium or rhodium.

15. The secondary battery of claim 10 wherein the metal of the metal-semiconductor alloy is nickel.

16. The secondary battery of claim 10 the metal-semiconductor alloy layer has a thickness of about 100 nanometers to 3 micrometers.

17. The secondary battery of claim 10 wherein the secondary battery comprises an anode current collector and the anode is formed on the anode current collector.

18. The secondary battery of claim 10 wherein porous mass of a sintered particulate material is in the shape of a pillar.

19. The secondary battery of claim 10 wherein the semiconductor material comprises silicon, the metal-semiconductor alloy is nickel silicide, and the metal-semiconductor alloy layer has a thickness of about 100 nanometers to 3 micrometers.

20. The secondary battery of claim 19 wherein porous mass of a sintered particulate material is in the shape of a pillar.

Assignments (7)
MERGER AND CHANGE OF NAME Recorded Jan 19, 2023
From: ENOVIX OPERATIONS INC.; ENOVIX CORPORATION
To: ENOVIX CORPORATION
Reel/Frame 062434/0809 →
MERGER AND CHANGE OF NAME Recorded Jan 5, 2022
From: RSVAC MERGER SUB INC.; ENOVIX CORPORATION; ENOVIX OPERATIONS INC.
To: ENOVIX OPERATIONS INC.
Reel/Frame 058646/0894 →
TERMINATION OF SECURED OPTION AGREEMENT Recorded Feb 5, 2021
From: YORK DISTRESSED ESSET FUND III, L.P.; RODGERS MASSEY REVOCABLE LIVING TRUST DTD 4/4/11, THURMAN JOHN RODGERS, TRUSTEE; PETRICK, MICHAEL; EDDY ZERVIGON REVOCABLE TRUST U/A DATED FEBRUARY 16, 2010 - EDDY ZERVIGON AS TRUSTEE; SABOUNGHI, EDGAR; GCHINVESTMENTS,LLC; SHERMAN, JOEL, DR.; THE OBERST FAMILY TRUST, DATED 12/7/2005; GREENBERGER, MARC; JEROME INVESTMENTS, LLC; MCGOVERN, BRIAN; DPIP PROJECT LION SERIES; TUNE HOUSE CAPITAL I LLC; DCM V, L.P.
To: ENOVIX CORPORATION
Reel/Frame 055229/0544 →
SECOND AMENDMENT TO SECURED OPTION AGREEMENT Recorded Jan 7, 2019
From: ENOVIX CORPORATION
To: YORK DISTRESSED ASSET FUND III, L.P.; RODGERS MASSEY REVOCABLE LIVING TRUST DTD 4/4/11, THURMAN JOHN RODGERS, TRUSTEE; MICHAEL PETRICK; EDDY ZERVIGON REVOCABLE TRUST U/A DATED FEBRUARY 16, 2010 - EDDY ZERVIGON AS TRUSTEE; EDGAR SABOUNGHI; GCH INVESTMENTS, LLC; DR. JOEL SHERMAN; THE OBERST FAMILY TRUST, DATED 12/7/2005; MARC GREENBERGER; JEROME INVESTMENTS, LLC; BRIAN MCGOVERN; DPIP PROJECT LION SERIES; TUNE HOUSE CAPITAL I LLC; DCM V, L.P.
Reel/Frame 048432/0300 →
FIRST AMENDMENT TO SECURED OPTION AGREEMENT Recorded Dec 6, 2018
From: ENOVIX CORPORATION
To: YORK DISTRESSED ASSET FUND III, L.P.; RODGERS MASSEY REVOCABLE LIVING TRUST DTD 4/4/11, THURMAN JOHN RODGERS, TRUSTEE; PETRICK, MICHAEL; EDDY ZERVIGON REVOCABLE TRUST U/A DATED FEBRUARY 16, 2010 -EDDY ZERVIGON AS TRUSTEE; SABOUNGHI, EDGAR; GCH INVESTMENTS, LLC; SHERMAN, JOEL, DR.; THE OBERST FAMILY TRUST, DATED 12/7/2005; GREENBERGER, MARC; JEROME INVESTMENTS, LLC; MCGOVERN, BRIAN; DPIP PROJECT LION SERIES; TUNE HOUSE CAPITAL I LLC
Reel/Frame 047733/0685 →
SECURED OPTION AGREEMENT Recorded Oct 29, 2018
From: ENOVIX CORPORATION
To: YORK DISTRESSED ASSET FUND III, L.P.; RODGERS MASSEY REVOCABLE LIVING TRUST DTD 4/4/11, THURMAN JOHN RODGERS, TRUSTEE; PETRICK, MICHAEL; EDDY ZERVIGON REVOCABLE TRUST U/A DATED FEBRUARY 16, 2010 -EDDY ZERVIGON AS TRUSTEE; SABOUNGHI, EDGAR; GCH INVESTMENTS, LLC; SHERMAN, JOEL, DR.; THE OBERST FAMILY TRUST, DATED 12/7/2005; GREENBERGER, MARC; JEROME INVESTMENTS, LLC; MCGOVERN, BRIAN; DPIP PROJECT LION SERIES
Reel/Frame 047348/0007 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2013
From: RAMASUBRAMANIAN, MURALI; SPOTNITZ, ROBERT M.
To: ENOVIX CORPORATION
Reel/Frame 029729/0119 →
Continuity (4)
Division 12426069 · Apr 17, 2009
Continuation In Part 12105090 · Apr 17, 2008
Provisional Application 61045886 · Apr 17, 2008
Related Publication 20130143120A1 · Jun 6, 2013