Integrated circuit fuse and method of fabricating the integrated circuit fuse

1. A fuse disposed over a substrate of an integrated circuit, comprising:

a conductive trace in a fuse-level metal layer of the integrated circuit, wherein the conductive trace comprises a fusible portion having a higher resistance than other portions of the conductive trace, and wherein the fusible portion comprises a longest dimension;

a dielectric structure disposed over the fusible portion and beyond the fusible portion in a direction parallel to a major surface of the substrate; and

a first cavity into the dielectric structure, the first cavity configured to capture debris from the fusible portion when the fusible portion is fused, wherein the first cavity is proximate to the fusible portion and separated from the fusible portion by a first separation wall, wherein the first cavity has a depth to at least a depth of the fuse-level metal layer with a deeper direction being in a direction toward the substrate, wherein the entire first cavity is disposed to a first side of the fusible portion in a direction parallel to a major surface of the substrate and perpendicular to the longest dimension of the fusible portion such that no part of the first cavity is over the fusible portion, wherein the first separation wall has a thickness selected to result in fracture, the fracture causing a fracture opening in the first separation wall and capture of debris from the fusible portion within the first cavity when the fusible portion is fused.

2. The fuse of claim 1 , wherein the selected thickness of the first separation wall is within about +/− ten percent of 1.2 micrometers.

3. The fuse of claim 2 , wherein the fusible portion has a width within about +/− ten percent of 1.0 micrometers.

4. The fuse of claim 1 , wherein the first cavity extends to a depth at or below the fuse-level metal layer.

5. The fuse of claim 1 , wherein the first cavity extends to the depth of the fuse-level metal layer, wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by a metal bounding portion of the fuse-level metal layer.

6. The fuse of claim 1 , wherein the first cavity extends to a depth below the fuse-level metal layer, and wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by a metal bounding portion of another metal layer deeper than the fuse-level metal layer.

7. The fuse of claim 1 , wherein the first cavity extends to a depth below the fuse-level metal layer, and wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by the substrate.

8. The fuse of claim 1 , further comprising a second cavity into the dielectric structure, the second cavity configured to capture debris from the fusible portion when the fusible portion is fused, wherein the second cavity is proximate to the fusible portion and separated from the fusible portion by a second separation wall, wherein the second cavity has a depth to at least a depth of the fuse-level metal layer, wherein the entire second cavity is disposed to a second side of the fusible portion different than the first side in a direction parallel to the major surface of the substrate and perpendicular to the longest dimension of the fusible portion such that no part of the second cavity is over the fusible portion, wherein the first separation wall and the second separation wall have a thickness selected to result in fracture, the fracture causing a fracture opening in at least one of the first separation wall and the second separation wall and capture of debris from the fusible portion within at least one of the first cavity or the second cavity when the fusible portion is fused.

9. The fuse of claim 8 , wherein the selected thickness of the first and second separation walls is within about +/− ten percent of 1.2 micrometers.

10. The fuse of claim 8 , wherein the first and second cavities extend to the depth of the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by respective bounding metal portions of the fuse-level metal layer.

11. The fuse of claim 8 , wherein the first and second cavities extend to the depth below the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by respective a bounding metal portions of another metal layer deeper than the fuse-level metal layer.

12. The fuse of claim 8 , wherein the first and second cavities extend to the depth below the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by the substrate.

13. A method of fabricating a fuse over a substrate of an integrated circuit, comprising:

forming a conductive trace in a fuse-level metal layer of the integrated circuit, wherein the fuse-level metal layer is disposed over a substrate of the integrated circuit, wherein the conductive trace comprises a fusible portion having a higher resistance than other portions of the conductive trace, and wherein the fusible portion comprises a longest dimension;

forming a dielectric structure over the fusible portion and beyond the fusible portion in a direction parallel to a major surface of the substrate; and

forming a first cavity into the dielectric structure, the first cavity configured to capture debris from the fusible portion when the fusible portion is fused, wherein the first cavity is proximate to the fusible portion and separated from the fusible portion by a first separation wall, wherein the first cavity has a depth to at least a depth of the fuse-level metal layer with a deeper direction being in a direction toward the substrate, wherein the entire first cavity is disposed to a first side of the fusible portion in a direction parallel to a major surface of the substrate and perpendicular to the longest dimension of the fusible portion such that no part of the first cavity is over the fusible portion, wherein the first separation wall has a thickness selected to result in fracture, the fracture causing a fracture opening in the first separation wall and capture of debris from the fusible portion within the first cavity when the fusible portion is fused.

14. The method of claim 13 , wherein the selected thickness of the first separation wall is within about +/− ten percent of 1.2 micrometers.

15. The method of claim 14 , wherein the fusible portion has a width within about +/− ten percent of 1.0 micrometers.

16. The method of claim 13 , wherein the first cavity extends to a depth at or below the fuse-level metal layer.

17. The method of claim 13 , wherein the first cavity extends to the depth of the fuse-level metal layer, wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by a bounding metal portion of the fuse-level metal layer.

18. The method of claim 13 , wherein the first cavity extends to a depth below the fuse-level metal layer, and wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by a bounding metal portion of another metal layer deeper than the fuse-level metal layer.

19. The method of claim 13 , wherein the first cavity extends to a depth below the fuse-level metal layer, and wherein the first cavity has a deepest end nearest to the substrate, and wherein the deepest end is bounded by the substrate.

20. The method of claim 13 , further comprising:

forming a second cavity into the dielectric structure, the second cavity configured to capture debris from the fusible portion when the fusible portion is fused, wherein the second cavity is proximate to the fusible portion and separated from the fusible portion by a second separation wall, wherein the second cavity has a depth to at least a depth of the fusible portion, wherein the entire second cavity is disposed to a second side of the fusible portion different than the first side in a direction parallel to the major surface of the substrate and perpendicular to the longest dimension of the fusible portion such that no part of the second cavity is over the fusible portion, wherein the first separation wall and the second separation wall have a thickness selected to result in fracture, the fracture causing a fracture opening in at least one of the first separation wall and the second separation wall and capture of debris from the fusible portion within at least one of the first cavity or the second cavity when the fusible portion is fused.

21. The method of claim 13 , wherein the selected thickness of the first and second separation walls is within about +/− ten percent of 1.2 micrometers.

22. The method of claim 13 , wherein the first and second cavities extend to the depth of the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by respective bounding metal portions of the fuse-level metal layer.

23. The method of claim 15 , wherein the first and second cavities extend to the depth below the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by respective a bounding portions of another metal layer deeper than the fuse-level metal layer.

24. The method of claim 15 , wherein the first and second cavities extend to the depth below the fuse-level metal layer, wherein the first and second cavities have respective deepest ends nearest to the substrate, and wherein the deepest ends are bounded by the substrate.