Light-emitting diode device
View Patent ↗A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)−1.
1. A light-emitting diode device, comprising:
a substrate including a first surface;
a plurality of light-emitting diode units formed on the first surface, wherein each of the light-emitting diode units comprises:
a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer;
an active layer formed between the first semiconductor layer and the second semiconductor layer; and
a first sidewall with a length of A microns, wherein A is a real number; and
a plurality of conductive connecting structures, spatially separated from each other, wherein the plurality of conductive connecting structures are formed on the first sidewall of one of the light-emitting diode units, and a spacing between two adjacent conductive connecting structures of the plurality of conductive connecting structures is less than 100 microns;
wherein each of the plurality of conductive connecting structures comprises a first extending part formed on one light-emitting diode unit and a second extending part formed on the adjacent light-emitting diode unit, wherein a length of the first extending part is different from that of the second extending part;
wherein a number of the conductive connecting structures is an integer larger than (A/100)−1.
2. The light-emitting diode device of claim 1 , further comprising a second plurality of conductive connecting structures formed on a second sidewall of the one of the light-emitting diode units opposite to the first sidewall, wherein the number of the conductive connecting structures formed on the first sidewall is not equal to that formed on the second sidewall.
3. A light-emitting diode device, comprising:
a substrate including a first surface;
a plurality of light-emitting diode units formed on the first surface, wherein each of the light-emitting diode units comprises:
a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer;
an active layer formed between the first semiconductor layer and the second semiconductor layer;
a first sidewall; and
a second sidewall opposite to the first sidewall; and
a plurality of conductive connecting structures spatially separated from each other, each of the plurality of conductive connecting structures comprising extending parts and electrically connecting adjacent two of the plurality of the light-emitting diode units, and wherein the plurality of conductive connecting structures is formed on the first sidewall and the second sidewall of one of the light-emitting diode units, and a spacing between two adjacent conductive connecting structures of the plurality of conductive connecting structures is less than 100 microns; and
wherein n conductive connecting structures (wherein n is an integer, and n>1) are formed on the first sidewall of the one of the plurality of light-emitting units, and m conductive connecting structures (wherein m is an integer, and m≧1) are formed on the second sidewall of the one of the light-emitting diode units, wherein n is not equal to m.
4. The light-emitting diode device of claim 3 , wherein the material of the conductive connecting structures comprises metal.
5. The light-emitting diode device of claim 3 , further comprising a third semiconductor layer formed between the second semiconductor layer and the active layer.
6. The light-emitting diode device of claim 3 , wherein the second semiconductor layer comprises metal oxide.
7. The light-emitting diode device of claim 3 , wherein the second semiconductor layer and the first semiconductor layer have different conductivity types.
8. The light-emitting diode device of claim 3 , wherein each of the light-emitting diode units has a third sidewall not parallel to the first sidewall and the second sidewall, and the length of the third sidewall is less than 150 microns.
9. The light-emitting diode device of claim 8 , wherein the conductive connecting structures are not formed on the third sidewall.
10. The light-emitting diode device of claim 3 , wherein an extension direction of the conductive connecting structures is the same as a direction the current flows from the one light-emitting diode unit to an adjacent light-emitting diode unit.
11. The light-emitting diode device of claim 3 , wherein the conductive connecting structures formed on the first sidewall of the one of the light-emitting diode units and the conductive connecting structures formed on the second sidewall of the one of the light-emitting diode units are arranged alternately.
12. The light-emitting diode device of claim 3 , wherein the conductive connecting structures directly contact with the adjacent two of the plurality of the adjacent light-emitting diode units.