GaN transistors with polysilicon layers for creating additional components
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
1. An integrated circuit comprising:
a channel layer;
a barrier layer disposed over the channel layer;
a source metal and a drain metal disposed on the barrier layer;
a gate structure disposed between the source and drain metal;
an insulating material disposed over the source metal, drain metal and gate structure;
a polysilicon layer disposed in the insulating material, the polysilicon layer having at least one p-type region; and
a plurality of metal interconnects disposed on the insulating material, each metal interconnect connected by a via to at least one of the source metal, the drain metal, and the at least one p-type region of the polysilicon layer.
2. The integrated circuit according to claim 1 , wherein the polysilicon layer further has at least one n-type region, and wherein a first via couples the source metal to a first interconnect of the plurality of metal interconnects and a second via electrically couples the at least one n-type region of the polysilicon layer to the first interconnect.
3. The integrated circuit according to claim 2 , wherein a third via couples the drain metal to a second interconnect of the plurality of metal interconnects and a fourth via electrically couples the at least one p-type region of the polysilicon layer to the second interconnect.
4. The integrated circuit according to claim 3 , further comprising a fifth via disposed in the insulating material that electrically couples an undoped region of the polysilicon layer to the second interconnect.
5. The integrated circuit according to claim 3 , further comprising:
an insulating layer disposed on the first and second interconnects;
an additional pair of metal interconnects disposed on the insulating layer; and
a pair of vias electrically coupling the additional pair of metal interconnects to the first and second interconnects, respectively.
6. The integrated circuit according to claim 1 , further comprising an additional polysilicon layer disposed in the insulating material.
7. The integrated circuit according to claim 6 , wherein the polysilicon Layer further has at least one n-type region, and wherein a first via couples the source metal to a first interconnect of the plurality of metal interconnects and a second via electrically couples the at least one n-type region of the polysilicon layer to the first interconnect.
8. The integrated circuit according to claim 7 , wherein a third via couples the drain metal to a second interconnect of the plurality of metal interconnects and a fourth via electrically couples the at least one p-type region of the polysilicon layer to the second interconnect.
9. The integrated circuit according to claim 8 , further comprising an insulating layer disposed on the first and second interconnects.
10. The integrated circuit according to claim 9 , further comprising a metal contact disposed on the insulating layer an another via disposed in the insulating layer and electrically coupling the metal contact to the additional polysilicon layer.
11. The integrated circuit according to claim 1 , further comprising:
a substrate; and
at least one transition layer disposed over the substrate,
wherein the channel layer is disposed over the at least one transition layer and the gate structure is disposed on the barrier layer.
12. The integrated circuit according to claim 11 , wherein the at least one transition layer comprises A 1 GaN and the channel layer comprises GaN.