Inverted top emitting device and method for producing same
An inverted top emitting device includes an TIO/Ag/ITO substrate, a cathode layer, an electron transport layer, an emissive layer, a hole transport layer, and an anode layer. The TIO/Ag/ITO substrate, the cathode layer, the electron transport layer, the emissive layer, the hole transport layer, and the anode layer are stacked in sequence. The cathode layer is made of cesium carbonate. The inverted top emitting device and its producing method provided by the present invention change the current structure of ITO/Ag/ITO/HTL/EML/ETL/Mg:Ag of the device to ITO/Ag/ITO/Cs 2 CO 3 /ETL/EML/HTL/MoO 3 /Ag. This avoids use of low work function metals, such as magnesium. Thus, even if the encapsulation is not satisfactory, the device is less likely to be oxidized by water and oxygen, providing the device with a longer service life.
1. An inverted top emitting device comprising a cathode layer made of cesium carbonate, wherein the cathode layer is doped with an alkali metal salt, and the alkali metal salt is cesium fluoride, cesium azide or lithium fluoride.
2. The device according to claim 1 , wherein cesium carbonate has a thickness of 1-5 nm.
3. The device according to claim 2 further comprising an electron transport layer made of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, an emissive layer is made of 4,4-N,N′-dicarbazole-1,1′-biphenyl doped with 2% of Ir(ppy)3, and a hole transport layer made of N,N′-bis-(1-naphthalenyl)-N,N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine.
4. The device according to claim 1 further comprising an anode layer made of molybdenum oxide/silver.
5. The device according to claim 3 , wherein the electron transport layer has a thickness of 30-50 nm, the emissive layer has a thickness of 35-40 nm, the hole transport layer has a thickness of 55-60 nm, a thickness of molybdenum oxide is 1-20 nm, and a thickness of silver is 10-20 nm.
6. A method for producing an inverted top emitting device comprising the steps of:
preparing an ITO/Ag/ITO substrate;
forming a cathode layer of cesium carbonate on the ITO/Ag/ITO substrate;
forming an electron transport layer, an emissive layer, and a hole transport layer on the cathode layer in sequence; and
forming an anode layer on the hole transport layer.
7. The method as claimed in claim 6 , wherein the step of preparing the ITO/Ag/ITO substrate includes ultrasonic cleaning the ITO/Ag/ITO substrate with a detergent and deionized water and drying the ITO/Ag/ITO substrate, wherein the layer of cesium carbonate is deposited on the ITO/Ag/ITO substrate by evaporation and has a thickness of 1-5 nm, wherein the cathode layer is doped with an alkali metal salt, and wherein the alkali metal salt is cesium fluoride, cesium azide or lithium fluoride.
8. The method as claimed in claim 7 , wherein the electron transport layer is made of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene and has a thickness of 30-35 nm, the emissive layer is made of 4,4-N,N′-dicarbazole-1,1′-biphenyl doped with 2% of Ir(ppy)3 and has a thickness of 35-40 nm, and the hole transport layer is made of N,N′-bis-(1-naphthalenyl)-N,N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine and has a thickness of 55-60 nm.
9. The method as claimed in claim 6 , wherein the anode layer is made of molybdenum oxide/silver, wherein a thickness of molybdenum oxide is 1 nm to 20 nm, and a thickness of silver is 10 nm to 20 nm.