Phosphor, light-emitting device, image pickup device, liquid crystal display device, lighting device, and vehicle
The present disclosure provides a (Ba 1−z ,Sr z ) 3 MgSi 2 O 8 :Eu 2+ based phosphor with high emission quantum efficiency. Specifically, the present disclosure provides a blue light emitting phosphor including: a (Ba 1−z ,Sr z ) 3 MgSi 2 O 8 based crystal where z satisfies 0≦z<1 and a (Ba 1−z ,Sr z )MgSiO 4 based crystal where z satisfies 0≦z<1 as a host crystal; and Eu 2+ as a luminescent center.
1. A phosphor for emitting blue light, comprising: a (Ba 1−z ,Sr z ) 3 MgSi 2 O 8 based crystal where z satisfies 0≦z<1 and a (Ba 1-z ,Sr z )MgSiO 4 based crystal where z satisfies 0≦z<1 as a host crystal; and Eu 2+ as a luminescent center.
2. The phosphor according to claim 1 , wherein in an X-ray diffraction pattern of the phosphor measured with Cu-Kα radiation, the phosphor has diffraction peaks at 2θ=22° or more and 23° or less, at 2θ=30.6° or more and 31.7° or less, and at 2θ=31.8° or more and 32.8° or less, and diffraction peaks at 2θ=28° or more and 30.4° or less and at 2θ=34° or more and 35.5° or less.
3. The phosphor according to claim 1 , wherein in an X-ray diffraction pattern of the phosphor measured with Cu-Kα radiation, a ratio “a” satisfies a=c/b and 0.01≦a<0.18, the ratio “a” being a ratio of an intensity “c” to an intensity “b”, wherein
the intensity “c” is a highest diffraction peak intensity in a range of 2θ=34° or more and 35.5° or less derived from the (Ba 1−z ,Sr z )MgSiO 4 based crystal, and
the intensity “b” is a highest diffraction peak intensity in a range of 2θ=31.8° or more and 32.8° or less derived from the (Ba 1−z ,Sr z ) 3 MgSi 2 O 8 based crystal.
4. The phosphor according to claim 1 , wherein the host crystal of the phosphor has a composition represented by the general formula: (Ba 1-z ,Sr z ) 3+j Mg 1+k Si 2+m O 8+n where j, k, m, n and z satisfy 0<j≦1.0, 0<k≦1.0, 0<m≦1.0, 0<n≦4.0, and 0≦z≦0.4.
5. The phosphor according to claim 1 , wherein the phosphor has a Eu content of less than 2.0 at. % of a total of Eu, Ba, and Sr.
6. The phosphor according to claim 1 , wherein the phosphor has a Eu content of 0.6 at. % or more of a total of Eu, Ba, and Sr.
7. A light-emitting device comprising:
the phosphor according to claim 1 ; and
a semiconductor diode based light-emitting element which emits light in a range of 380-420 nm.
8. The light-emitting device according to claim 7 , wherein the light-emitting element is a laser diode.
9. The light-emitting device according to claim 8 , wherein the laser diode has a laser energy density of 0.5 kW/cm 2 or more.
10. The light-emitting device according to claim 7 , wherein the light-emitting element comprises a light-emitting layer made of a nitride semiconductor having a nonpolar or semipolar growth plane.
11. An image pickup device comprising:
a flashlight comprising the light-emitting device according to claim 7 ; and
a lens on which light reflected from an object irradiated with light from the flashlight is incident.
12. A liquid crystal display device comprising a backlight comprising the light-emitting device according to claim 7 .
13. A lighting device comprising a light source portion comprising the light-emitting device according to claim 7 .
14. The lighting device according to claim 13 , wherein the lighting device is a vehicle lighting device.
15. A vehicle comprising the vehicle lighting device according to claim 14 .
16. The phosphor according to claim 1 , wherein the host crystal of the phosphor has a composition represented by the general formula: (Ba 1−z ,Sr z ) 3+j Mg 1+k Si 2+m O 8+n where j, k, m, n and z satisfy 0<j≦1.0, 0<k≦1.0, 0<m≦1.0, 0<n≦4.0, and 0<z≦0.4.