Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer.
1. A heat treatment apparatus for heating a substrate by irradiating the substrate with a flash of light, comprising:
a chamber for receiving a substrate therein;
a flash lamp for irradiating a first surface of the substrate held in said chamber with a flash of light;
a halogen lamp for irradiating a second surface of the substrate with light; and
a temperature equalizing ring abutting against an edge portion of the substrate to surround the edge portion, said temperature equalizing ring including an annular portion, a collar, and a reinforcing portion, said annular portion being parallel to a main surface of the substrate, said collar being provided at the inner peripheral edge of said annular portion and supports the lower surface of the edge portion of the substrate, said reinforcing portion being provided in continuation to an outer peripheral edge of said annular portion, said reinforcing portion forming an angle greater than 0 degrees and less than 180 degrees with said annular portion.
2. The heat treatment apparatus according to claim 1 , wherein
said temperature equalizing ring is made of a material selected from the group consisting of silicon carbide, aluminum nitride, and boron nitride.
3. The heat treatment apparatus according to claim 1 , wherein
the angle formed by said annular portion and said reinforcing portion is 90 degrees.
4. The heat treatment apparatus according to claim 3 , further comprising
a support ring provided fixedly on an inner wall of said chamber,
said temperature equalizing ring being fitted on said support ring.
5. The heat treatment apparatus according to claim 3 , further comprising:
a support ring provided fixedly on an inner wall of said chamber and having a flat portion parallel to the main surface of the substrate; and
a protrusion provided on said flat portion and supporting said annular portion at a distance of not more than 2 mm from said flat portion.
6. The heat treatment apparatus according to claim 5 , wherein
the area of part of said annular portion opposed to said flat portion is not less than one-third of the area of the annular portion.
7. The heat treatment apparatus according to claim 3 , wherein
said temperature equalizing ring includes a first flat portion extending from said reinforcing portion in a direction opposite from said annular portion and parallel to the main surface of the substrate,
said heat treatment apparatus further comprising:
a support ring provided fixedly on an inner wall of said chamber and having a second flat portion parallel to the main surface of the substrate; and
a protrusion provided on said second flat portion and supporting said first flat portion at a distance of not more than 2 mm from said second flat portion.
8. The heat treatment apparatus according to claim 1 , further comprising
a light shielding member for shielding at least part of said temperature equalizing ring against a flash of light.