Ceramic/copper circuit board and semiconductor device
A ceramic/copper circuit board of an embodiment includes a ceramic substrate and first and second copper plates bonded to surfaces of the ceramic substrate via bonding layers containing active metal elements. In cross sections of end portions of the first and second copper plates, a ratio (C/D) of an area C in relation to an area D is from 0.2 to 0.6. The area C is a cross section area of a portion protruded toward an outer side direction of the copper plate from a line AB, and the area D is a cross section area of a portion corresponding to a right-angled triangle whose hypotenuse is the line AB. R-shape sections are provided at edges of upper surfaces of the first and second copper plates, and lengths F of the R-shape sections are 100 μm or less.
1. A ceramic/copper circuit board comprising:
a ceramic substrate having a first surface and a second surface;
a first copper plate bonded to the first surface of the ceramic substrate via a first bonding layer containing at least one active metal element selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al), and niobium (Nb) and at least one element selected from the group consisting of silver (Ag), copper (Cu), tin (Sn), indium (In), and carbon (C); and
a second copper plate bonded to the second surface of the ceramic substrate via a second bonding layer containing at least one active metal element selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al), and niobium (Nb) and at least one element selected from the group consisting of silver (Ag), copper (Cu), tin (Sn), indium (In), and carbon (C),
wherein each of end portions of the first and second copper plates has a shape in which a ratio (C/D) of an area C in relation to an area D is from 0.2 to 0.6, wherein in cross sections of the end portions of the first and second copper plates, a point A is a bonding edge of the copper plate and the ceramic substrate, a point B is a point where a straight line drawn from the point A toward an inner side of an upper surface of the copper plate in a direction of 45° in relation to an interface of the copper plate and the ceramic substrate intersects with the upper surface of the copper plate, a line AB is a straight line connecting the point A and the point B, the area C is a cross section area of a portion protruded from the line AB toward an outer side direction of the copper plate, and the area D is a cross section area of a portion corresponding to a right-angled triangle whose hypotenuse is the line AB,
wherein R-shape sections are provided at edges of the upper surfaces of the first and second copper plates corresponding to a corner portion of the area C, and each of lengths F of the R-shape sections viewed from the above of the first and second copper plates is 10 μm or more and 100 μm or less, and
wherein end portions of the first and second bonding layers are protruded from the end portions of the first and second copper plates, respectively, and each of lengths E of the end portions of the first and second bonding layers protruded from the end portions of the first and second copper plates is from 10 μm to 150 μm.
2. The ceramic/copper circuit board according to claim 1 ,
wherein a content of the active metal elements per each of forming areas of 10 mm 2 of the first and second bonding layers is in a range of from 0.5 mg to 0.8 mg.
3. The ceramic/copper circuit board according to claim 1 ,
wherein each of the first and second bonding layers contains the active metal element, silver (Ag), copper (Cu), and at least one element selected from the group consisting of tin (Sn), indium (In), and carbon (C).
4. The ceramic/copper circuit board according to claim 1 ,
wherein each of the first and second bonding layers contains the active metal element, silver (Ag), copper (Cu), tin (Sn), and carbon (C).
5. The ceramic/copper circuit board according to claim 1 ,
wherein the ceramic substrate is a silicon nitride substrate, an aluminum nitride substrate, or an aluminum oxide substrate.
6. The ceramic/copper circuit board according to claim 1 ,
wherein a thickness of the ceramic substrate is from 0.2 mm to 1 mm.
7. The ceramic/copper circuit board according to claim 1 ,
wherein each of thicknesses of the first and second copper plates is from 0.1 mm to 1 mm.
8. The ceramic/copper circuit board according to claim 1 ,
wherein a crack does not occur in the ceramic substrate when 1000 cycles of thermal cycle tests in which a maximum temperature is 170° C. or more are performed to the ceramic/copper circuit board.
9. The ceramic/copper circuit board according to claim 8 ,
wherein the thermal cycle test is performed with one cycle being −40° C.×30 minutes→room temperature (25° C.)×10 minutes→175° C.×30 minutes→room temperature (25° C.)×10 minutes.
10. A semiconductor device, comprising:
a ceramic/copper circuit board according to claim 1 ; and
a semiconductor chip mounted on the first copper plate of the ceramic/copper circuit board.
11. The semiconductor device according to claim 10 ,
wherein the semiconductor chip comprises a SiC element.
12. The ceramic/copper circuit board according to claim 1 ,
wherein the ratio (C/D) of the area C in relation to the area D is from 0.3 to 0.5.
13. The ceramic/copper circuit board according to claim 1 ,
wherein each of the lengths E is from 10 μm to 100 μm.
14. The ceramic/copper circuit board according to claim 1 ,
wherein each of the lengths F is 10 μm or more and 50 μm or less.