Epitaxy base, semiconductor light emitting device and manufacturing methods thereof
An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.
1. A semiconductor light emitting device, comprising:
an epitaxy base, comprising
a substrate; and
a nucleating layer, disposed on the substrate, wherein the nucleating layer is an aluminum nitride layer having a single crystal structure, an electron diffraction pattern of the nucleating layer comprises a plurality of dot patterns, each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1;
a first type semiconductor layer, disposed on the nucleating layer;
a buffer layer, disposed between the nucleating layer and the first type semiconductor layer;
an active layer, disposed on the first type semiconductor layer, and
a second type semiconductor layer, disposed on the active layer.
2. The semiconductor light emitting device as claimed in claim 1 , wherein a surface of the substrate close to the nucleating layer is a plane.
3. The semiconductor light emitting device as claimed in claim 1 , wherein the nucleating layer is formed on the substrate by sputtering.
4. A method of manufacturing a semiconductor light emitting device, comprising:
providing a substrate;
forming a nucleating layer in a form of a single crystal structure on the substrate by sputtering, wherein the nucleating layer is an aluminum nitride layer, an electron diffraction pattern of the nucleating layer comprises a plurality of dot patterns, each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1;
forming a first type semiconductor layer by performing a metal organic chemical vapor deposition process, wherein the first type semiconductor layer is disposed on the nucleating layer;
forming a buffer layer by performing the metal organic chemical vapor deposition process, wherein the buffer layer is disposed between the nucleating layer and the first type semiconductor layer;
forming an active layer by performing the metal organic chemical vapor deposition process, wherein the active layer is disposed on the first type semiconductor layer; and
forming a second type semiconductor layer by performing the metal organic chemical vapor deposition process, wherein the second type semiconductor layer is disposed on the active layer.