Display device, display panel and manufacturing method thereof
View Patent ↗A display device, display panel and manufacturing method thereof, where the display panel includes an array substrate including a plurality of thin film transistors, a pixel define layer disposed on the array substrate, and an organic light-emitting structure which is surrounded by the pixel define layer and of a top emission structure. The display panel further includes: a light blocking layer disposed between the array substrate and the pixel define layer and configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor. By disposing the light blocking layer between the array substrate and the pixel define layer, light passing through the pixel define layer may be prevented from irradiating on the thin film transistor in the array substrate. Therefore, leakage current generated by the thin film transistor due to optical excitation may be reduced, thereby improving stability of the thin film transistor.
1. A display panel, comprising:
an array substrate including a plurality of thin film transistors;
a pixel define layer disposed on the array substrate;
an organic light-emitting structure surrounded by the pixel define layer, the organic light-emitting structure being of a top emission structure; and
a light blocking layer disposed between the array substrate and the pixel define layer, wherein the light blocking layer is configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor,
wherein, the organic light-emitting structure has a reflection anode disposed on the array substrate, and the light blocking layer and the reflection anode are disposed on the same layer, and
wherein, the light blocking layer and the reflection anode are made of the same material and are formed by a synchronous manufacturing process.
2. The display panel according to claim 1 , wherein, thickness of the light blocking layer is the same as that of the reflection anode.
3. The display panel according to claim 1 , wherein, the organic light-emitting structure further has an organic light-emitting layer and a semi-transparent cathode; wherein
the organic light-emitting layer is disposed on the reflection anode; and
the semi-transparent cathode is disposed on the organic light-emitting layer.
4. The display panel according to claim 1 , wherein, the light blocking layer is configured to block light of a wave band in a range from 380 nm to 780 nm.
5. The display panel according to claim 1 , further comprising:
a plane-shaped planarization layer disposed between the light blocking layer and the array substrate; and
a glass cover-plate disposed opposite to the array substrate and spaced from the pixel define layer through a support disposed on the pixel define layer.
6. The display panel according to claim 1 , wherein, material of the light blocking layer is high reflectivity material.
7. The display panel according to claim 6 , wherein, a reflectivity of the high reflectivity material is not less than 90%.
8. The display panel according to claim 6 , wherein, the high reflectivity material is silver or aluminum.
9. The display panel according to claim 1 , wherein, material of the light blocking layer is high absorptivity material.
10. The display panel according to claim 9 , wherein, an absorptivity of the high absorptivity material is not less than 90%.
11. The display panel according to claim 9 , wherein, the high absorptivity material is one of chromium, chromium oxide, chromium nitride and black resin.
12. A display device, comprising a display panel including:
an array substrate including a plurality of thin film transistors;
a pixel define layer disposed on the array substrate;
an organic light-emitting structure surrounded by the pixel define layer, the organic light-emitting structure being of a top emission structure; and a light blocking layer disposed between the array substrate and the pixel define layer, wherein the light blocking layer is configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor,
wherein, the organic light-emitting structure has a reflection anode disposed on the array substrate, and the light blocking layer and the reflection anode are disposed on the same layer, and
wherein, the light blocking layer and the reflection anode are made of the same material and are formed by a synchronous manufacturing process.
13. A manufacturing method of a display panel, comprising:
forming an array substrate in which a plurality of thin film transistors are formed; and
forming an organic light-emitting structure and a pixel define layer surrounding the organic light-emitting structure on the array substrate, wherein the organic light-emitting structure is of a top emission structure, and a light blocking layer is formed between the array substrate and the pixel define layer, wherein the light blocking layer is configured to prevent light passing through the pixel define layer from irradiating on the thin film transistor,
wherein, forming the organic light-emitting structure on the array substrate includes: forming a reflection anode of the organic light-emitting structure on the array substrate,
wherein, the light blocking layer and the reflection anode are formed on the same layer, and
wherein, the light blocking layer and the reflection anode are made of the same material and are formed through a synchronous manufacturing process.
14. The manufacturing method of the display panel according to claim 13 , wherein, forming the organic light-emitting structure on the array substrate further includes:
forming an organic light-emitting layer and a semi-transparent cathode of the organic light-emitting structure on the reflection anode in sequence.
15. The manufacturing method of the display panel according to claim 13 , wherein, the light blocking layer is made of high reflectivity material or high absorptivity material.