IP Library Granted Patent US 9,490,147
Granted Patent B2
US 9,490,147 · App. 13/762,132 · Granted Nov 8, 2016

Stud bump structure and method for manufacturing the same

Inventors: Tung-Han Chuang (Taipei, TW); Hsing-Hua Tsai (Taichung, TW); Jun-Der Lee (Taichung, TW)
Assignee: Wire Technology Co., Ltd.
H01L21/4853H01L23/49811H01L24/11H01L24/13H01L24/16H01L2224/0401H01L2224/05624H01L2224/05644H01L2224/05647H01L2224/05655H01L2224/1134H01L2224/11901H01L2224/131H01L2224/133H01L2224/1329H01L2224/13082H01L2224/13139H01L2224/1601H01L2224/16058H01L2224/16238H01L2224/81193H01L2224/94H01L2924/12041
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Quick Facts
Patent No.
US 9,490,147
App. No.
13/762,132
Granted
Nov 8, 2016
Kind
B2
Abstract

A stud bump structure and method for manufacturing the same are provided. The stud bump structure includes a substrate, and a first silver alloy stud bump disposed on the substrate, wherein the first silver alloy stud bump has a weight percentage ratio of Ag:Au:Pd=60-99.98:0.01-30:0.01-10.

Claims (25)

1. A stud bump structure, comprising

a first substrate; and

a first silver alloy stud bump disposed on the first substrate and assembled to a second substrate, wherein the first silver alloy stud bump is composed of Ag, Au, and Pd and has a weight percentage ratio of Ag:Au:Pd=89.99-97.99:0.01:2-10,

wherein the first substrate comprises a wafer and the second substrate comprises a wafer or a printed circuit board.

2. The stud bump structure as claimed in claim 1 , further comprising a bonding pad on the first substrate, wherein the first silver alloy stud bump is disposed on the bonding pad.

3. The stud bump structure as claimed in claim 1 , further comprising a second silver alloy stud bump disposed on the first silver alloy stud bump.

4. The stud bump structure as claimed in claim 3 , wherein a diameter and a height of the second silver alloy stud bump is between 20 μm and 100 μm.

5. The stud bump structure as claimed in claim 3 , wherein the second silver alloy stud bump and the first silver alloy stud bump have the same composition.

6. The stud bump structure as claimed in claim 1 , wherein a diameter and a height of the first silver alloy stud bump is between 20 μm and 100 μm.

7. A method for manufacturing a stud bump structure as claimed in claim 1 , comprising

providing a silver alloy wire;

melting an end of the silver alloy wire to form a first free air ball;

bonding the first free air ball onto a first substrate to form a first ball bond;

cutting off the silver alloy wire, such that the first ball bond is left on the first substrate to form a first silver alloy stud bump, wherein the first silver alloy stud bump is composed of Ag, Au, and Pd and has a weight percentage ratio of Ag:Au:Pd=89.99-97.99:0.01:2-10; and

assembling the first silver alloy stud bump to a second substrate,

wherein the first substrate comprises a wafer and the second substrate comprises a wafer or a printed circuit board.

8. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein a wire diameter of the silver alloy wire is between 10 μm and 50 μm.

9. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein the first free air ball is bonded onto the first substrate to form a first ball bond by hot pressing or ultrasonic hot pressing.

10. The method for manufacturing a stud bump structure as claimed in claim 7 , further comprising a bonding pad on the first substrate, wherein the first free air ball is disposed on the bonding pad.

11. The method for manufacturing a stud bump structure as claimed in claim 7 , further comprising

melting an end of the silver alloy wire again to form a second free air ball;

bonding the second free air ball onto the first silver alloy stud bump to form a second ball bond; and

cutting off the silver alloy wire, such that the second ball bond is left on the first silver alloy stud bump to form a second silver alloy stud bump.

12. The method for manufacturing a stud bump structure as claimed in claim 11 , wherein a diameter and a height of the second silver alloy stud bump is between 20 μm and 100 μm.

13. The method for manufacturing a stud bump structure as claimed in claim 7 , wherein a diameter and a height of the first silver alloy stud bump is between 20 μm and 100 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2013
From: CHUANG, TUNG-HAN; TSAI, HSING-HUA; LEE, JUN-DER
To: WIRE TECHNOLOGY CO., LTD.
Reel/Frame 029809/0869 →
Priority Claims (1)
TW 101141253 A · Nov 7, 2012 · national
Continuity (1)
Related Publication 20140124920A1 · May 8, 2014