High-power semiconductor module

1. A high-power semiconductor module, comprising:

a high-power semiconductor device mounted on a module housing and having at least two electrical connections and a semiconductor arranged between the at least two electrical connections; and

a short-circuit device mounted on the module housing and configured to generate a persistent electrically conducting path between the at least two electrical connections upon receiving a trigger signal to electrically destroy the semiconductor of the high-power semiconductor module.

2. The high-power semiconductor module of claim 1 ,

wherein at least a part of a high-power semiconductor of the high-power semiconductor device will be destroyed to generate the persistent electrically conducting path; and/or

wherein at least a part of a short-circuit semiconductor of the short-circuit device will be destroyed to generate the persistent electrically conducting path.

3. The high-power semiconductor module of claim 1 , wherein the short-circuit device comprises:

a thyristor as a short-circuit semiconductor; and/or wherein the high-power semiconductor device comprises:

a thyristor, GTO, IGCT, IGBT and/or a diode as high-power semiconductor.

4. The high-power semiconductor module of claim 1 , wherein the short-circuit device comprises:

a short-circuit semiconductor which provides a sacrificial region, which is configured for being destroyed by a current pulse triggered by the trigger signal.

5. The high-power semiconductor module of claim 1 , wherein the high-power semiconductor device comprises:

a high-power semiconductor, and the short-circuit device includes a short-circuit semiconductor, which are arranged in a common substrate.

6. The high-power semiconductor module of claim 5 ,

wherein the short-circuit semiconductor is completely surrounded by the high-power semiconductor.

7. The high-power semiconductor module of claim 5 , comprising:

a pole piece attached to a side of the high-power semiconductor;

wherein the pole piece includes a hole with an insulated mount for a spring-loaded contact pin for transmitting the trigger signal to the short-circuit semiconductor; and/or

wherein the pole piece includes a trench with a control lead insulated mounted to the pole piece.

8. The high-power semiconductor module of claim 5 , wherein the high-power semiconductor device comprises:

a free-wheeling diode arranged in the common substrate.

9. The high-power semiconductor module of claim 5 , wherein the high-power semiconductor device and the short-circuit semiconductor device are arranged in a disk of a common substrate; and wherein the disk comprises:

a middle region including the short-circuit semiconductor, a first annular region surrounding the middle region and including a free-wheeling diode, and a second annular region surrounding the first annular region and including the high-power semiconductor.

10. The high-power semiconductor module of claim 1 , wherein the short-circuit device comprises:

a capacitor for providing electrical energy for destroying of a semiconductor such that the electrically conducting path will be generated and/or for triggering the short-circuit device.

11. The high-power semiconductor module of claim 10 , wherein the capacitor of the short-circuit device is connected to a capacitor of the high-power semiconductor device via a diode for preventing an unloading of the capacitor of the short-circuit device, when the capacitor of the high-power semiconductor device unloads.

12. The high-power semiconductor module of claim 1 , wherein the short-circuit device comprises:

a fibre-optic connection, and a control circuitry for converting a trigger signal from the fibre-optic connection into an electrical trigger signal.

13. The high-power semiconductor module of claim 1 , wherein the high-power semiconductor device comprises:

a fibre-optic connection, and a control circuitry for processing control signals from the fibre-optic connection.

14. A modular multilevel converter system, comprising:

a plurality of high-power semiconductor modules according to claim 1 ; and

a controller for controlling the high-power semiconductor devices of the high-power semiconductor modules, wherein the controller is configured for detecting a failure of a high-power semiconductor device and for providing a trigger signal to a short-circuit device for bypassing a failed high-power semiconductor device.

15. The high-power semiconductor module of claim 2 , wherein the short-circuit device comprises:

a thyristor as a short-circuit semiconductor; and/or wherein the high-power semiconductor device comprises:

a thyristor, GTO, IGCT, IGBT and/or a diode as high-power semiconductor.

16. The high-power semiconductor module of claim 15 , wherein the short-circuit device comprises:

a short-circuit semiconductor which provides a sacrificial region, which is configured for being destroyed by a current pulse triggered by the trigger signal.

17. The high-power semiconductor module of claim 16 , wherein the high-power semiconductor device comprises:

a high-power semiconductor, and the short-circuit device includes a short-circuit semiconductor, which are arranged in a common substrate.

18. The high-power semiconductor module of claim 17 , comprising:

a pole piece attached to a side of the high-power semiconductor;

wherein the pole piece includes a hole with an insulated mount for a spring-loaded contact pin for transmitting the trigger signal to the short-circuit semiconductor; and/or

wherein the pole piece includes a trench with a control lead insulated mounted to the pole piece.

19. The high-power semiconductor module of claim 18 , wherein the high-power semiconductor device comprises:

a free-wheeling diode arranged in the common substrate.