Thin film transistor and manufacturing method thereof
A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.
1. A thin film transistor, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
a first source layer and a first drain layer,
wherein the entire first drain layer forms a first coplanar layer with the first semiconductor layer and does not overlap with the first semiconductor layer,
wherein the first drain layer a same thickness as the first semiconductor layer, and
wherein the first source layer and the first drain layer are at both sides of the first semiconductor layer;
a second source layer and a second drain layer,
wherein the entire second drain layer forms a second coplanar layer with the second semiconductor layer and does not overlap with the second semiconductor layer,
wherein the second drain layer has a same thickness as the second semiconductor layer,
wherein the second source layer and the second drain layer are at both sides of the second semiconductor layer, and
wherein only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer; and
a gate insulating layer directly formed on the second coplanar layer.
2. The thin film transistor of claim 1 , wherein:
cations of the first semiconductor layer and the second semiconductor layer are the same as each other.
3. The thin film transistor of claim 1 , further comprising:
a gate electrode on the gate insulating layer.
4. The thin film transistor of claim 3 , wherein:
the second semiconductor layer is the channel layer.
5. The thin film transistor of claim 4 , wherein:
a carrier concentration of the first semiconductor layer is lower than that of the second semiconductor layer.
6. The thin film transistor of claim 5 , wherein:
the carrier concentration of the first semiconductor layer is equal to or less than 1 e 15 /cm 3 , and the carrier concentration of the second semiconductor layer is equal to or more than 1 e 17 /cm 3 .
7. The thin film transistor of claim 6 , further comprising:
a source region comprising the first source layer and the second source layer; and
a drain region comprising the first drain layer and the second drain layer, wherein:
a carrier concentration of each of the source region and the drain region is equal to or more than 1 e 19 /cm 3 .
8. The thin film transistor of claim 4 , wherein:
the first semiconductor layer comprises an insulating material dopable with impurities.
9. The thin film transistor of claim 4 , wherein:
the first semiconductor layer functions as a light blocking layer.