IP Library Granted Patent US 9,508,138
Granted Patent B2
US 9,508,138 · App. 14/742,717 · Granted Nov 29, 2016

Method of detecting photolithographic hotspots

Inventors: Yi-Shiang Chang (Changhua County, TW); Chia-Chi Lin (Hsinchu County, TW); Shin-Shing Yeh (Hsinchu, TW); Pei-Shan Shih (Kaohsiung, TW); Jun-Cheng Lai (Hsin-Chu, TW)
Assignee: Powerchip Technology Corporation
G06T7/0004G06K9/4604G06T5/00G06T7/0042G06T7/0085G06T2207/30148
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Quick Facts
Patent No.
US 9,508,138
App. No.
14/742,717
Granted
Nov 29, 2016
Kind
B2
Abstract

A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Claims (13)

1. A method for detecting a photolithographic hotspot, comprising:

receiving layout data;

performing an aerial image simulation on said layout data to extract a plurality of aerial image intensity indices comprising an aerial image intensity maximum (I max ), an aerial image intensity minimum (I min ), an aerial image intensity threshold (I th ) and an aerial image intensity array (I array ), wherein the aerial image intensity array (I array ,) is related to a representatively major and decisive regular pattern in a given region of the layout data;

generating an aerial image detector based on the mathematical combination of said aerial image intensity indices and comprising I min /I array , I max /I th and I min /I th ; and

determining the position and the type of a corresponding photolithographic hotspot in accordance with the value of said aerial image detector.

2. The method for detecting a photolithographic hotspot of claim 1 , wherein said aerial image detector further comprises an aerial image intensity log slop (ILS) and a normalized aerial image intensity log slop (NILS).

3. The method for detecting a photolithographic hotspot of claim 2 , wherein said aerial image detector I min /I array corresponds to a photolithographic hotspot of a line necking or of a trench bridging.

4. The method for detecting a photolithographic hotspot of claim 2 , wherein said aerial image detector I max /I th corresponds to a photolithographic hotspot of a trench bridging, of a line necking or of a sub-resolution assist feature (SRAF) print out.

5. The method for detecting a photolithographic hotspot of claim 2 , wherein said aerial image detector I min /I th corresponds to a photolithographic hotspot of a trench bridging or of a sub-resolution assist feature (SRAF) print out.

6. The method for detecting a photolithographic hotspot of claim 2 , wherein said ILS corresponds to a photolithographic hotspot of insufficient exposure latitude.

7. The method for detecting a photolithographic hotspot of claim 1 , wherein said NILS corresponds to a photolithographic hotspot of insufficient exposure latitude or pattern profile degradation.

8. The method for detecting a photolithographic hotspot of claim 1 , wherein a photolithographic hotspot database is established in accordance with a pre-determined range of a photolithographic hotspot and with the position and type of said determined photolithographic hotspot after a photolithographic hotspot detection on a full chip.

9. The method for detecting a photolithographic hotspot of claim 1 , wherein said layout data are after an optical proximity correction (OPC).

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049770/0171 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2015
From: CHANG, YI-SHIANG; LIN, CHIA-CHI; YEH, SHIN-SHING; SHIH, PEI-SHAN; LAI, JUN-CHENG
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 035947/0594 →
Priority Claims (1)
TW 104113937 A · Apr 30, 2015 · national
Continuity (1)
Related Publication 20160321793A1 · Nov 3, 2016