Phosphor, method for producing phosphor and light emitting device

1. A phosphor comprising a europium-activated sialon crystal having a basic composition represented by the following formula:

(Sr 1-x ,Eu x ) α Si β Al γ O δ N ω ,

wherein x is 0<x<1, α is 3, and β, γ, δ and ω satisfy 9<β≦15, 1≦γ≦5, 0.5≦δ≦3 and 10≦ω≦30,

wherein the phosphor belongs to an orthorhombic system, has an emission peak wavelength of 500 nm or more and 540 nm or less, is composed of particles having a Wadell's sphericity of from 0.65 to 0.71, and emits green light by being excited by ultraviolet light, violet light or blue light, and

wherein the phosphor has an average particle size of from 8 to 40 μm.

2. A method for producing a phosphor according to claim 1 , comprising:

a preparing step of preparing a mixture of phosphor raw materials containing 0.05 to 0.5% by mass of carbon;

a baking step of baking the mixture of phosphor raw materials in an inert gas atmosphere having a pressure of 0.1 to 1.0 MPa; and

a classification step of removing by classification a small-particle portion in a range of 20% by mass or less of a phosphor powder prepared by baking the mixture of phosphor raw materials.

3. A light emitting device comprising:

a substrate,

a semiconductor light emitting element which is arranged on the substrate and emits ultraviolet light, violet light or blue light, and

a light emitting portion which is formed so as to cover a light emitting surface of the semiconductor light emitting element and contains a phosphor which emits visible light by being excited by light emitted from the semiconductor light emitting element,

wherein the phosphor comprises a phosphor according to claim 1 , and the light emitting portion has a thickness of 150 μm or more and 600 μm or less.

4. The light emitting device according to claim 3 ,

wherein the semiconductor light emitting element is a light-emitting diode or a laser diode which emits light having a peak wavelength in a range of 370 nm or more and 470 nm or less.