IP Library Granted Patent US 9,548,331
Granted Patent B2
US 9,548,331 · App. 14/347,849 · Granted Jan 17, 2017

Manufacturing method of quantum dot light emitting diode

Inventor: Peizhi Cai (Beijing, CN)
Assignees: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.
H01L27/15C09K11/02C09K11/08C09K11/562H01L27/322H01L33/0087H01L33/06H01L33/08H01L33/16H01L33/28H01L33/42H05B33/14B82Y20/00B82Y40/00H01L33/504H01L2933/0016Y10S977/774Y10S977/892Y10S977/95
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,548,331
App. No.
14/347,849
Granted
Jan 17, 2017
Kind
B2
Abstract

A quantum dot light emitting diode, including a first electrode and a second electrode, a quantum dot light emitting layer disposed between the two electrodes, including at least a red quantum dot, a green quantum dot and a blue quantum dot, and a black matrix at least disposed among the red quantum dot, the green quantum dot and the blue quantum dot; one of the first electrode and the second electrode that is located on a light exiting side is at least a transparent electrode. With the quantum dot light emitting diode, a full-color display can be realized, and the aperture ratio of pixels can be effectively enhanced. There are further disclosed a manufacturing method of the quantum dot light emitting diode and a display device.

Claims (15)

1. A manufacturing method of a quantum dot light emitting diode, comprising: forming a first electrode and a second electrode on a substrate, forming a quantum dot light emitting layer that includes at least a red quantum dot, a green quantum dot and a blue quantum dot between the first electrode and the second electrode, and forming a black matrix at least among the red quantum dot, the green quantum dot and the blue quantum dot, wherein forming of the red quantum dot includes;

dissolving a zinc sulfide nano semiconductor compound with a particle diameter of 10 to 12 nm into a first organic solvent to form a first mixture; and

coating the first mixture on the substrate and conducting a first patterning process treatment so as to form the red quantum dot after the organic solvent has volatized;

wherein forming of the green quantum dot includes:

dissolving a zinc sulfide nano semiconductor compound with a particle diameter of 7 to 8 nm into a second organic solvent to form a second mixture; and

coating the second mixture on the substrate and conducting a second patterning process treatment so as to form the green quantum dot after the organic solvent has volatized; and

wherein forming of the blue quantum dot includes:

dissolving a zinc sulfide nano semiconductor compound with a particle diameter of 4 to 5 nm into a third organic solvent to form a third mixture; and

coating the third mixture on the substrate and conducting a third patterning process treatment so as to form the blue quantum dot after the organic solvent has volatilized.

2. The manufacturing method claimed as claim 1 , wherein forming of the black matrix among the red quantum dot, the green quantum dot and the blue quantum dot includes:

forming the black matrix among a stack of the red quantum dot and the second electrode corresponding to the red quantum dot, a stack of the green quantum dot and the second electrode corresponding to the green quantum dot, and a stack of the blue quantum dot and the second electrode corresponding to the blue quantum dot, and the first electrode covering the substrate; or,

forming the black matrix among a stack of the red quantum dot and the first electrode corresponding to the red quantum dot, a stack of the green quantum dot and the first electrode corresponding to the green quantum dot, and a stack of the blue quantum dot and the first electrode corresponding to the blue quantum dot, and the second electrode covering the substrate.

3. The manufacturing method claimed as claim 1 , wherein forming of the black matrix among the red quantum dot, the green quantum dot and the blue quantum dot includes:

forming the black matrix among a stack of the red quantum dot and the second electrode corresponding to the red quantum dot, a stack of the green quantum dot and the second electrode corresponding to the green quantum dot, and a stack of the blue quantum dot and the second electrode corresponding to the blue quantum dot, and the first electrode covering the substrate; or,

forming the black matrix among a stack of the red quantum dot and the first electrode corresponding to the red quantum dot, a stack of the green quantum dot and the first electrode corresponding to the green quantum dot, and a stack of the blue quantum dot and the first electrode corresponding to the blue quantum dot, and the second electrode covering the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2014
From: CAI, PEIZHI
To: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 032571/0120 →
Priority Claims (1)
CN 2013 1 0201938 · May 27, 2013 · national
Continuity (1)
Related Publication 20160218141A1 · Jul 28, 2016