Stacked semiconductor apparatus being electrically connected through through-via and monitoring method
A semiconductor apparatus includes a plurality of stacked chips. Each of the plurality of stacked chips includes a delay chain. Each of the plurality of stacked chips comprises a plurality of Through-Vias, wherein one of the plurality of Through-Vias formed in a first one of the plurality of stacked chips and electrically coupled to a predetermined location of a first delay chain on the first one of the plurality of stacked chips and one of the plurality of Through-Vias formed in a neighboring one of the plurality of stacked chips and electrically coupled to a predetermined location of a delay chain on the neighboring one of the plurality of stacked chips are configured to electrically couple the first one of the plurality of stacked chips to the neighboring one of the plurality of stacked chips. A signal transmitted from a first one of the plurality of stacked chips generates a feedback signal to the first one of the plurality of stacked chips through one or more of the plurality of Through-Vias.
1. A semiconductor apparatus comprising:
a plurality of stacked chips, wherein each of the plurality of stacked chips comprises:
a delay chain; and
a plurality of Through-Vias,
wherein one of the plurality of Through-Vias formed in a first one of the plurality of stacked chips and electrically coupled to a predetermined location of a first delay chain on the first one of the plurality of stacked chips and one of the plurality of Through-Vias formed in a neighboring one of the plurality of stacked chips and electrically coupled to a predetermined location of a delay chain on the neighboring one of the plurality of stacked chips are configured to electrically couple the first one of the plurality of stacked chips to the neighboring one of the plurality of stacked chips, and
wherein a signal transmitted from the first one of the plurality of stacked chips generates a feedback signal to the first one of the plurality of stacked chips through one or more of the plurality of Through-Vias.
2. A semiconductor apparatus comprising:
an oscillating control portion disposed in a first chip, and configured to generate a transmission signal in response to receiving an input signal and a feedback signal;
first and second Through-Vias configured to electrically couple the first chip and a second chip;
a first delay portion disposed in the first chip and electrically coupled to the first and second Through-Vias; and
a second delay portion disposed in the second chip and electrically coupled to the first and second Through-Vias,
wherein the oscillating control portion transmits the transmission signal to the first Through-Via, and receives the feedback signal through the second Through-Via.
3. The semiconductor apparatus of claim 2 , wherein the first and second delay portions are turned ON in response to first and second selection signals, respectively, wherein the first and second selection signals are generated based on stacked chip information and path selection information.
4. The semiconductor apparatus of claim 3 , wherein the first delay portion is turned OFF in response to the first selection signal, and the second delay portion is turned ON in response to the second selection signal.
5. The semiconductor apparatus of claim 2 , further comprising:
third and fourth Through-Vias configured to electrically couple the first chip and the second chip;
a third delay portion disposed in the first chip and electrically coupled to the second and third Through-Vias;
a fourth delay portion disposed in the second chip and electrically coupled to the second and third Through-Vias;
a fifth delay portion disposed in the first chip and electrically coupled to the third and fourth Through-Vias; and
a sixth delay portion disposed in the second chip, and electrically coupled to the third and fourth Through-Vias.
6. The semiconductor apparatus of claim 5 , wherein the oscillating control portion receives the feedback signal from one of the second, third and fourth Through-Vias.
7. The semiconductor apparatus of claim 6 , wherein the first, second, third, fourth, fifth and sixth delay portions are turned ON in response to first, second, third, fourth, fifth and sixth selection signals, respectively, wherein the first, second, third, fourth, fifth and sixth selection signals are generated based on stacked chip information and path selection information.
8. The semiconductor apparatus of claim 6 , wherein the first delay portion is turned OFF in response to the first selection signal, the second delay portion is turned ON in response to the second selection signal, the third delay portion is turned ON in response to the third selection signal, the fourth delay portion is turned OFF in response to the fourth selection signal, the fifth delay portion is turned OFF in response to the fifth selection signal, and the sixth delay portion is turned ON in response to the sixth selection signal.
9. The semiconductor apparatus of claim 8 , wherein the second delay portion inverts a signal received through the first Through-Via, and transmits the inverted signal to the second Through-Via.
10. The semiconductor apparatus of claim 9 , wherein the third delay portion inverts a signal received through the second Through-Via, and transmits the inverted signal to the third Through-Via.