Image sensor device
An image sensor device includes a substrate having a pixel array region, isolation structures in the substrate separating pixel regions from one another in the pixel array region, a photo-sensing region in each of the pixel regions, and a reflective cavity structure in the substrate within each of the pixel region. The reflective cavity structure continuously extends from a bottom of the isolation structure to a deeper central portion of each of the pixel regions, thereby forming a dish-like profile. The reflective cavity structure has a reflective index smaller than that of the substrate.
1. An image sensor device, comprising:
a substrate having a pixel array region;
a plurality of isolation structures in the substrate separating pixel regions from one another in the pixel array region;
a photo-sensing region in the substrate within each of the pixel regions; and
a reflective cavity structure under the photo-sensing region in the substrate within each of the pixel regions, wherein the reflective cavity structure continuously extends from a bottom of the isolation structure to a deeper central portion of each of the pixel regions, thereby forming a dish-like profile, and wherein the reflective cavity structure has a reflective index smaller than that of the substrate.
2. The image sensor device according to claim 1 , wherein the reflective cavity structure has a thickness ranging between 20˜1000 angstroms.
3. The image sensor device according to claim 1 , wherein the reflective cavity structure is in direct contact with a bottom of each of the isolation structures.
4. The image sensor device according to claim 1 , wherein the reflective cavity structure is not in direct contact with a bottom of each of the isolation structures.
5. The image sensor device according to claim 1 , wherein the photo-sensing region comprises a photodiode.
6. The image sensor device according to claim 1 , wherein the substrate is a silicon substrate and the reflective cavity structure comprises a silicon oxide layer in the silicon substrate.
7. The image sensor device according to claim 6 , wherein the substrate has a refractive index of 4.5 and the reflective cavity structure has a refractive index of 1.5.
8. The image sensor device according to claim 1 further comprising an interconnection structure disposed on the substrate.
9. The image sensor device according to claim 8 , wherein the interconnection structure comprises at least one dielectric layer and at least one conductive layer.
10. The image sensor device according to claim 8 further comprising a color filter layer disposed on the interconnection structure, and a micro lens on the color filter layer.