Semiconductor device
In an active region, p + regions are selectively disposed in a surface layer of an n − drift layer on an n + semiconductor substrate. A p-base layer is disposed on surfaces of the n − drift layer and the P + regions, and an MOS structure is disposed on the p-base layer. In another portion of the active region, a p + region is disposed to be in contact with the source electrode on the p + regions. In a breakdown voltage structure region ( 100 ), a JTE structure having at least a P − region is disposed separately from the P + regions and the p-base layer, to surround the active region. The P − region is electrically in contact with the P + region in a portion in which the MOS structure is not formed, in the vicinity of the boundary between the active region and the breakdown voltage structure region.
1. A semiconductor device comprising:
an active region disposed on a semiconductor substrate; and
an edge termination structure region disposed on the semiconductor substrate to surround the active region, wherein
the active region includes
a first-conductivity-type semiconductor layer disposed on the semiconductor substrate and having an impurity concentration lower than the semiconductor substrate,
a first second-conductivity-type semiconductor region selectively disposed in a surface layer of the first-conductivity-type semiconductor layer, to reach a boundary between the active region and the edge termination structure region, the surface layer of the first-conductivity-type semiconductor layer being on a side opposite to the semiconductor substrate,
a first electrode electrically connected to the first second-conductivity-type semiconductor region,
a front surface device structure made up of at least the first second-conductivity-type semiconductor region and the first electrode,
a second electrode disposed on a back surface of the semiconductor substrate, and
a second second-conductivity-type semiconductor region disposed in a region excluding a region in which the front surface device structure is disposed, and formed to be in contact with the first second-conductivity-type semiconductor region and up to a boundary position between the active region and the edge termination structure region,
the edge termination structure region includes
a plurality of third second-conductivity-type semiconductor regions disposed in the surface layer of the first-conductivity-type semiconductor layer, separately from the boundary between the active region and the edge termination structure region completely and having an impurity concentration lower than the first second-conductivity-type semiconductor region, a surface layer of the plurality of third second-conductivity-type semiconductor regions being on the side opposite to the semiconductor substrate,
the second second-conductivity-type semiconductor region is in contact with the first electrode,
among the plurality of the third second-conductivity-type semiconductor regions, at least the third second-conductivity-type semiconductor region closest to the active region is electrically connected to the second second-conductivity-type semiconductor region under a gate runner disposed above the semiconductor substrate in the vicinity of the boundary between the active region and the edge termination structure region, and
the second second-conductivity-type semiconductor region is formed directly on the first second-conductivity-type semiconductor region in a depth direction and on the side opposite to a side of the first-conductivity-type semiconductor layer.
2. The semiconductor device of claim 1 , wherein
the front surface device structure is further made up of:
a second-conductivity-type semiconductor layer disposed on the first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor region, and having an impurity concentration lower than the first second-conductivity-type semiconductor region,
a fourth first-conductivity-type semiconductor region selectively formed in a surface layer of the second-conductivity-type semiconductor layer, the surface layer of the second-conductivity-type semiconductor layer being on a side opposite to the first second-conductivity-type semiconductor region,
a fifth first-conductivity-type semiconductor region penetrating the second-conductivity-type semiconductor layer in the depth direction, to the first-conductivity-type semiconductor layer,
a gate electrode disposed via a gate insulation film on a surface of a portion of the second-conductivity-type semiconductor layer, the portion of the second-conductivity-type semiconductor layer being interposed between the fourth first-conductivity-type semiconductor region and the fifth first-conductivity-type semiconductor region, and
the first electrode is in contact with the fourth first-conductivity-type semiconductor region and the second-conductivity-type semiconductor layer.
3. The semiconductor device of claim 2 , wherein
the plurality of the third second-conductivity-type semiconductor regions is disposed separately from the first second-conductivity-type semiconductor region and the second-conductivity-type semiconductor layer.
4. The semiconductor device of claim 2 , wherein
among the plurality of the third second-conductivity-type semiconductor regions, at least the third second-conductivity-type semiconductor region closest to the active region has an end portion that faces the active region and is separated by a distance of 20 μm or less from an end portion of the second-conductivity-type semiconductor layer, the end portion of the second-conductivity-type semiconductor layer facing the edge termination structure region.
5. The semiconductor device of claim 2 , wherein
the second-conductivity-type semiconductor layer is an epitaxial layer formed by an epitaxial growth method.
6. The semiconductor device of claim 2 , wherein
the first second-conductivity-type semiconductor region, the fourth first-conductivity-type semiconductor region, and the fifth first-conductivity-type semiconductor region are impurity diffusion regions formed by an ion implantation method.
7. The semiconductor device of claim 1 , wherein
among the plurality of the third second-conductivity-type semiconductor regions, at least the third second-conductivity-type semiconductor region closest to the active region has an end portion that faces the active region and is separated by a distance of 20 μm or less from an end portion of the first second-conductivity-type semiconductor region, the end portion of the first second-conductivity-type semiconductor region facing the edge termination structure region.
8. The semiconductor device of claim 1 , wherein
the first-conductivity-type semiconductor layer is an epitaxial layer formed by an epitaxial growth method.
9. The semiconductor device of claim 1 , wherein
the semiconductor substrate is made of silicon carbide.
10. The semiconductor device of claim 1 , wherein
a front surface of the semiconductor substrate is parallel to a (000-1) plane or a plane tilted by 10 degrees or less relative to the (000-1) plane.
11. The semiconductor device of claim 1 , wherein
a front surface of the semiconductor substrate is parallel to a (0001) plane or a plane tilted by 10 degrees or less relative to the (0001) plane.