Light emitting device

1. A light emitting device, comprising:

a substrate, having an upper surface and a lower surface opposite to each other, and a plurality of conductive through holes penetrating through the substrate and connecting to the upper surface and the lower surface;

a conductive electrode connection layer, disposed on the upper surface of the substrate and electrically connected with the conductive through holes, wherein an edge of the conductive electrode connection layer is aligned with an edge of the substrate;

an epitaxial structure, disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer; and

a plurality of pads, disposed on the lower surface of the substrate and connected with the conductive through holes.

2. The light emitting device as recited in claim 1 , wherein the conductive electrode connection layer has at least one first electrode, at least one second electrode and a connection layer disposed between the substrate and the first electrode and between the substrate and the second electrode, wherein an edge of the connection layer is aligned with an edge of the substrate.

3. The light emitting device as recited in claim 2 , further comprising:

an insulating layer, disposed on the conductive electrode connection layer and insulating the first electrode and the second electrode.

4. The light emitting device as recited in claim 3 , wherein the epitaxial structure comprises:

a first type semiconductor layer, disposed on the insulating layer, wherein the first electrode penetrates through the insulating layer so as to be electrically connected with the first type semiconductor layer;

a light emitting layer, disposed on the first type semiconductor layer; and

a second type semiconductor layer, disposed on the light emitting layer, wherein the second electrode penetrates through the insulating layer, the first type semiconductor layer and the light emitting layer so as to be electrically connected with the second type semiconductor layer.

5. The light emitting device as recited in claim 4 , further comprising:

an ohmic contact layer, disposed between the first type semiconductor layer and the insulating layer.

6. The light emitting device as recited in claim 5 , wherein the ohmic contact layer is a patterned structure.

7. The light emitting device as recited in claim 5 , further comprising:

a reflection layer, disposed between the ohmic contact layer and the insulating layer.

8. The light emitting device as recited in claim 4 , further comprising:

an insulation protection layer, covering an edge of the first type semiconductor layer, an edge of the light emitting layer and an edge of the second type semiconductor layer, wherein an edge of the insulation protection layer is aligned with an edge of the insulating layer.

9. The light emitting device as recited in claim 2 , wherein the at least one first electrode is a plurality of first electrodes, the at least one second electrode is a plurality of second electrodes, a profile of each of the first electrodes when viewing from atop is in a point shape, and a profile of each of the second electrodes when viewing from atop is a combination of a point shape and a line shape.

10. The light emitting device as recited in claim 1 , further comprising:

a sheet-like wavelength converting layer, disposed on the epitaxial structure, wherein an edge of the sheet-like wavelength converting layer is aligned with the edge of the substrate.

11. The light emitting device as recited in claim 10 , wherein the epitaxial structure has a rough surface, and the rough surface and the sheet-like wavelength converting layer have micron-scale voids therebetween.

12. The light emitting device as recited in claim 10 , further comprising:

a optical coupling layer, disposed between the sheet-like wavelength converting layer and the epitaxial structure.

13. The light emitting device as recited in claim 12 , wherein the optical coupling layer has a rough surface, and the rough surface and the sheet-like wavelength converting layer and/or the epitaxial structure have micron-scale voids therebetween.

14. The light emitting device as recited in claim 10 , wherein the sheet-like wavelength converting layer comprises at least two sheet-like wavelength converting unit layers, and a main emission peak wavelength of each of the sheet-like wavelength converting unit layers gradually decreases towards a direction away from the epitaxial structure.

15. The light emitting device as recited in claim 14 , wherein thicknesses of the sheet-like wavelength converting unit layers are different.

16. The light emitting device as recited in claim 15 , wherein the thickness of each of the sheet-like wavelength converting unit layers gradually increases towards the direction away from the epitaxial structure.

17. The light emitting device as recited in claim 10 , further comprising:

a color mixing layer, disposed on the sheet-like wavelength converting layer, wherein an edge of the color mixing layer is aligned with an edge of the sheet-like wavelength converting layer.

18. The light emitting device as recited in claim 10 , wherein a thickness of the sheet-like wavelength converting layer is 1.5 times to 25 times a thickness of the epitaxial structure.

19. The light emitting device as recited in claim 1 , wherein an area of an orthogonal projection of the epitaxial structure on the substrate is 0.8 to 1 times an area of the upper surface of the substrate.

20. The light emitting device as recited in claim 1 , wherein a thickness of the epitaxial structure is between 3 μm to 15 μm.

21. The light emitting device as recited in claim 1 , wherein each of the conductive through holes and the conductive electrode connection layer have at least one space therebetween.