Narrow sized laser diode
Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.
1. A method for assembling a gallium and nitrogen containing optical device operable as a laser diode, the method comprising:
providing a gallium and nitrogen containing material having a width and a length, the width of the material being a distance between sides of the material and the length of the material being a distance between ends of the material, the material also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the material, the ridge waveguide having a width that is less than the width of the material, where the width of the material is 70 microns or less; a pair of facets configured on the ends of the material, the pair of facets including a first facet configured at a first end of the material and a second facet configured at a second end of the material; and one or more wirebonding pads coupled to the n-side contact; and
assembling a submount coupled to the material such that the p-type region of the material is facing the submount.
2. The method of claim 1 , wherein the width of the material is less than 70 microns and greater than 20 microns.
3. The method of claim 1 , further comprising testing the laser diode at a wafer level to characterized properties selected from threshold current density, a voltage versus current relationship, a light out versus current relationship, and a combination of any of the foregoing.
4. The method of claim 1 , wherein the laser diode is operable at a wavelength selected from 430 nm to 480 nm or from 480 nm to 535 nm or from 390 nm to 430 nm.
5. The method of claim 1 , wherein the pair of facets are formed by a dry etching method selected from reactive ion etching (RIE), inductively plasma coupled etching (ICP), and chemical assisted ion beam etching (CAIBE).
6. The method of claim 1 , wherein the material has a semipolar surface orientation selected from the (20-21), (20-2-1), (30-31), (30-3-1), and (11-22) plane orientations, or an offcut of any of the foregoing orientations.
7. The method of claim 1 , wherein the material has a nonpolar surface orientation or an offcut thereof.
8. A method of assembling a gallium and nitrogen containing optical device operable as a laser diode, the method comprising:
providing a gallium and nitrogen containing material having a width and a length, the width of the material being a distance between sides of the material and the length of the material being a distance between ends of the material, the material also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the material, the ridge waveguide having a width that is less than the width of the material, where the width of the material is less than 120 microns; and one or more wirebonding pads disposed on the n-side contact of the material for coupling wires to the material; and
assembling a submount coupled to the material such that the p-type region of the material is facing the submount.
9. The method of claim 8 , wherein a pair of etched facets are configured on the ends of the material.
10. The method of claim 9 , wherein the pair of etched facets are formed by a dry etching method selected from reactive ion etching (RIE), inductively plasma coupled etching (ICP), and chemical assisted ion beam etching (CAIBE).
11. The method of claim 8 , wherein the width of the material is less than 110 microns.
12. The method of claim 8 , wherein the width of the material is less than 70 microns.
13. The method of claim 8 , wherein the laser diode is configured for testing at a wafer level to characterize properties selected from threshold current density, a voltage versus current relationship, a light out versus current relationship, and a combination of any of the foregoing.
14. The method of claim 8 , wherein the laser diode is operable at a wavelength from 430 nm to 480 nm.
15. The method of claim 8 , wherein the laser diode is operable at a wavelength from 480 nm to 535 nm.
16. The method of claim 8 , wherein the laser diode is operable at a wavelength from 390 nm to 430 nm.
17. The method of claim 8 , wherein the material has a semipolar surface orientation selected from the (20-21), (20-2-1), (30-31), (30-3-1), and (11-22) plane orientations, or an offcut of any of the foregoing orientations.
18. The method of claim 8 , wherein the material has a nonpolar surface orientation, or an offcut thereof.
19. A method for assembling a gallium and nitrogen containing optical device operable as a laser diode, the method comprising:
providing a gallium and nitrogen containing material having a width and a length, the width of the material being a distance between sides of the material and the length of the material being a distance between ends of the material, the material also having a p-type region and an n-side contact opposite the p-type region; a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the material, the ridge waveguide having a width that is less than the width of the material, where the width of the material is less than 120 microns; one or more wirebonding pads disposed on the n-side contact of the material for coupling wires to the material; and a pair of etched facets configured on the ends of the material, the pair of etched facets including a first facet configured at a first end of the material and a second facet configured at a second end of the material; and
assembling a submount coupled to the material such that the p-type region of the material is facing the submount.
20. The method of claim 19 , wherein the pair of etched facets are formed by a dry etching method selected from reactive ion etching (RIE), inductively plasma coupled etching (ICP), and chemical assisted ion beam etching (CAIBE).