IP Library Granted Patent US 9,654,094
Granted Patent B2
US 9,654,094 · App. 14/473,021 · Granted May 16, 2017

Semiconductor switch circuit and semiconductor substrate

Inventors: Atsushi Ishimaru (Yokohama Kanagawa, JP); Keita Masuda (Kawasaki Kanagawa, JP)
Assignee: Kabushiki Kaisha Toshiba
H03K17/161H03K17/693
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Quick Facts
Patent No.
US 9,654,094
App. No.
14/473,021
Granted
May 16, 2017
Kind
B2
Abstract

According to one embodiment, a semiconductor switch circuit includes a semiconductor substrate, an insulating film, a semiconductor layer, a first wiring line, a semiconductor switch unit, and a first conductor. The insulating film is provided on the semiconductor substrate. The semiconductor layer is provided on the insulating film. The first wiring line is provided above the insulating film. The semiconductor switch unit is provided on the semiconductor layer and is electrically connected to the first wiring line. The first conductor is provided between the first wiring line and the semiconductor substrate.

Claims (39)

1. A semiconductor switch circuit, comprising:

a semiconductor substrate;

an insulating film on the semiconductor substrate;

a semiconductor layer on the insulating film;

a semiconductor switch unit in the semiconductor layer, the semiconductor switch unit comprising a first switch portion comprising first transistors connected in series between a common terminal and a first terminal, and a second switch portion comprising second transistors connected in series between the first terminal and a ground terminal;

a first wiring line provided above the insulating film and electrically connected to the semiconductor switch unit; and

a conductor provided between the first wiring line and the semiconductor substrate.

2. The semiconductor switch circuit according to claim 1 , wherein the conductor is connected to a power supply through a resistor.

3. The semiconductor switch circuit according to claim 1 , wherein the conductor is isolated from the first wiring line.

4. The semiconductor switch circuit according to claim 3 , wherein the conductor comprises a plurality of objects disposed apart from each other.

5. The semiconductor switch circuit according to claim 3 , further comprising:

a second wiring line electrically connected to the first transistors, wherein the conductor and the second wiring line are arranged on the same place.

6. The semiconductor switch circuit according to claim 3 , wherein the conductor is located immediately below the first wiring line.

7. The semiconductor switch circuit according to claim 3 , further comprising:

an interlayer insulating film provided adjacent to the semiconductor layer, wherein

the first wiring line is provided on the interlayer insulating film.

8. The semiconductor switch circuit according to claim 3 , wherein the semiconductor switch circuit comprises a radio frequency switch circuit.

9. The semiconductor switch circuit according to claim 1 , wherein the conductor is electrically isolated from the first wiring line.

10. The semiconductor switch circuit according to claim 9 , wherein the conductor comprises a plurality of objects disposed apart from each other.

11. The semiconductor switch circuit according to claim 9 , further comprising:

a second wiring line electrically connected to the first transistors, wherein

the conductor and the second wiring line are arranged on the same plane.

12. The semiconductor switch circuit according to claim 9 , wherein the conductor is located immediately below the first wiring line.

13. The semiconductor switch circuit according to claim 9 , further comprising:

an interlayer insulating film provided adjacent to the semiconductor layer, wherein

the first wiring line is provided on the interlayer insulating film.

14. The semiconductor switch circuit according to claim 10 , wherein the semiconductor switch circuit comprises a radio frequency switch circuit.

15. The semiconductor switch circuit:

a semiconductor substrate;

an insulating film on the semiconductor substrate;

a semiconductor layer on the insulating film;

a semiconductor switch unit in the semiconductor layer, the semiconductor switch unit comprising a first switch portion comprising first transistors connected in series between a common terminal and a first terminal, and a second switch portion comprising second transistors connected in series between the first terminal and a ground terminal;

a first wiring line provided above the insulating film and electrically connected to the semiconductor switch unit with a terminal; and

a conductor provided on the insulating film and isolated from the first wiring line.

16. The semiconductor switch circuit according to claim 15 , wherein the conductor is connected to a power supply through a resistor.

17. The semiconductor switch circuit according to claim 15 , wherein the conductor is electrically isolated from the first wiring line.

18. The semiconductor switch circuit according to claim 15 , wherein the conductor comprises a plurality of objects disposed apart from each other.

19. The semiconductor switch circuit according to claim 15 , further comprising:

an interlayer insulating film provided between the insulating film and the conductor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 11, 2015
From: ISHIMARU, ATSUSHI; MASUDA, KEITA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 035825/0395 →
Priority Claims (2)
JP 2014-049264 · Mar 12, 2014 · national
JP 2014-169877 · Aug 22, 2014 · national
Continuity (1)
Related Publication 20150263721A1 · Sep 17, 2015