Semiconductor memory device including a ferroelectric layer

1. A semiconductor memory device comprising:

a pillar including a source, a drain arranged over the source and a channel region between the source and the drain;

a gate arranged on an outer surface of the pillar; and

at least one ferroelectric layer interposed between the pillar and the gate,

wherein the source has an impurity type opposite to that of the drain.

2. The semiconductor memory device of claim 1 , wherein the source comprises an n type impurity region having a high concentration, and the drain comprises a p type impurity region having a high concentration.

3. The semiconductor memory device of claim 2 , wherein the channel region comprises p type impurities.

4. The semiconductor memory device of claim 3 , further comprising a junction inducement region including n type impurities between the drain and the channel region.

5. The semiconductor memory device of claim 1 , wherein the ferroelectric layer comprises a hafnium oxide (Hf x O y ) layer, a zirconium oxide layer (Zr x O y ), a hafnium-zirconium (Hf x Zr y O z ) layer, PZT [Pb(Zr x Ti 1-x )O 3 , 0≦x≦1], or SBT (SrBi 2 Ta 2 O 9 ).

6. The semiconductor memory device of claim 1 , wherein the ferroelectric layer comprises:

a first ferroelectric layer polarized by a first electric field; and

a second ferroelectric layer polarized by a second electric field different from the first ferroelectric field.

7. The semiconductor memory device of claim 6 , wherein the first ferroelectric layer comprises a material different from that of the second ferroelectric layer.

8. The semiconductor memory device of claim 6 , wherein the first and second ferroelectric layers comprise a substantially same type of a material having different composition ratios.

9. The semiconductor memory device of claim 6 , wherein the second ferroelectric layer is positioned over the first ferroelectric layer.

10. The semiconductor memory device of claim 1 , further comprising a silicon oxide layer between the pillar and the ferroelectric layer.

11. The semiconductor memory device of claim 1 , wherein the gate and the ferroelectric layer are configured to surround an entire outer surface of the pillar by one continuous gate electrode and one continuous storage film.

12. The semiconductor memory device of claim 1 , wherein the gate and the ferroelectric layer are formed on both sidewalls of the pillar.

13. A semiconductor memory device comprising:

a pillar including a channel region extending in a direction substantially perpendicular to an upper surface of a semiconductor substrate, a source arranged under the channel region and a drain arranged over the channel region;

a storage medium formed on an outer surface of the pillar, and including a plurality of ferroelectric layers individually polarized by different electric fields; and

a gate arranged on an outer surface of the storage medium,

wherein the ferroelectric layers comprise a substantially same type of a material having different composition ratios.

14. The semiconductor memory device of claim 13 , wherein the ferroelectric layers are stacked.

15. The semiconductor memory device of claim 13 , further comprising an insulting layer between the semiconductor substrate and the storage medium.

16. The semiconductor memory device of claim 13 , wherein the source has a first impurity type, and the drain and the channel region have a second impurity type opposite to first impurity type.

17. The semiconductor memory device of claim 16 , further comprising a junction inducement region including the first impurity type between the drain and the channel region.

18. The semiconductor memory device of claim 13 , wherein the gate and the storage medium are configured to surround an entire outer surface of the pillar by one continuous gate electrode and one continuous storage film.

19. The semiconductor memory device of claim 13 , wherein the gate and the storage medium are formed on both sidewalls of the pillar.